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Search Publications by: Richard A. Allen (Fed)

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Displaying 101 - 125 of 269

Array Based Test Structure for Optical-Electrical Overlay Calibration

March 22, 2007
Author(s)
Byron J. Shulver, Richard A. Allen, Anthony Walton, Michael W. Cresswell, J. T. Stevenson, S Smith, Andrew S. Bunting, P. Durgapal, Alan Gundlach, Les I. Haworth, Alan W. Ross, Anthony J. Snell
The novel overlay test structure reported in this paper was purposely designed to serve as an application specific reference material. It features standard frame-in-frame optical overlay targets which are embedded in electrical test structures and

Extraction of Sheet Resistance and Linewidth from All-Copper ECD Test-Structures Fabricated from Silicon Preforms

March 22, 2007
Author(s)
Byron J. Shulver, Andrew S. Bunting, Alan Gundlach, Les I. Haworth, Alan W. Ross, A. J. Smith, Anthony J. Snell, J. T. Stevenson, Anthony Walton, Michael W. Cresswell, Richard A. Allen
Test Structures for the extraction of Electrical Critical Dimensions (ECD) and having all-copper features with no barrier metal films have been fabricated. The advantage of this approach is that electrical measurements provide a non-destructive method for

Study of Test Structures for Use as Reference Material in Optical Critical Dimension Applications

March 22, 2007
Author(s)
Richard A. Allen, Heather Patrick, Michael Bishop, Thomas Germer, Ronald G. Dixson, William Gutherie, Michael W. Cresswell
Optical critical dimension (OCD) metrology has rapidly become an important technology in supporting the worldwide semiconductor industry. OCD relies on a combination of measurement and modeling to extract the average dimensions of an array of identical

A New Critical Dimension Metrology for Chrome-on-Glass Substrates Based ons-Parameter Measurements Extracted from Coplanar Waveguide Test Structures

October 1, 2006
Author(s)
Chidubem Nwokoye, Mona E. Zaghloul, Michael W. Cresswell, Richard A. Allen, Christine E. Murabito
In mask fabrication, Critical Dimension (CD) metrology is conducted by optical transmission, Scanning Electron Microscopy (SEM), and Atomic Force Microscopy (AFM) tools. All these have different advantages and limitations. The work reported here is the

The Study of the U.S. Measurement System for Micro Nano Technologies

September 1, 2006
Author(s)
Richard A. Allen, Craig McGray, Michael Gaitan
The National Institute of Standards and Technology (NIST) has launched an ambitious assessment of the nation''s decentralized measurement system, that is far more encompassing than the few studies done over the last several decades. The aim is to determine

Modeling and Simulation of Nanometer Scale Copper Resistivity

July 1, 2006
Author(s)
Emre Yarimbiyik, Harry A. Scahfft, Richard A. Allen, Mona E. Zaghloul
A highly flexible simulation program to calculate the resistivity of thin films and lines with various line widths has been developed. The program takes into account the effect of surface and grain boundary scatterings, as well as temperature, on

RM 8111: Development of a Prototype Linewidth Standard

May 1, 2006
Author(s)
Michael W. Cresswell, William Gutherie, R. Dixon, Richard A. Allen, Christine E. Murabito, Joaquin (. Martinez
Staff of the Semiconductor Electronics Division, the Information Technology Laboratory, and the Precision Engineering Laboratory at NIST, in collaboration with VLSI Standards, Inc., of San Jose, California, have developed a new generation of prototype

Design and Fabrication of a Copper Test Structure as a Electrical Critical Dimension Reference

April 1, 2006
Author(s)
Byron J. Shulver, Andrew S. Bunting, Alan Gundlach, Les I. Haworth, Alan W. Ross, Anthony J. Snell, J. T. Stevenson, Anthony Walton, Richard A. Allen, Michael W. Cresswell
A novel copper damascene process is reported for the implementation of Electrical Critical Dimension (ECD) reference material. The method of fabrication first creates an initial 'silicon preform' whose linewidth is transfered into a trench using a silicon

Traceable Atomic Force Microscope Dimensional Metrology at NIST

March 1, 2006
Author(s)
Ronald G. Dixson, Ndubuisi G. Orji, Joseph Fu, Michael W. Cresswell, Richard A. Allen, William F. Guthrie
The National Institute of Standards and Technology (NIST) has a multifaceted program in atomic force microscope (AFM) dimensional metrology. There are two major instruments being used for traceable measurements at NIST. The first is a custom in-house