Temperature Dependence of the Modulation of Electrical Llinewidth of Single-Crystal Critical Dimension Artifacts

Published

March 1, 1998

Author(s)

Richard A. Allen, O. Oyebanjo, Michael W. Cresswell, Loren W. Linholm

Abstract

Single-crystal critical dimension (CD) test structures for reference material applications, with features defined using lattice-plane selective etching, are under development at NIST. The materials are intended to eliminate methods divergence between various types of metrology tools. Initial electrical measurements suggested that there are surface depletion effects that cause the electrical CD (ECD) measurements to understate what we think is the actual physical linewidth. In this paper, electrical measurements of these test structures are performed at several temperatures to determine whether such surface depletion effects cause the underestimation of the CD.

Proceedings Title

Proc., IEEE International Conference on Microelectronic Test Structures

Issue

158

Conference Dates

March 23-26, 1998

Conference Location

Kanazawa, 1, JA

Pub Type

Conferences

Keywords

critical dimension, linewidth, methods divergence, metrology, reference material, semiconductor processing, surface depletion

Citation

Allen, R. , Oyebanjo, O. , Cresswell, M. and Linholm, L. (1998), Temperature Dependence of the Modulation of Electrical Llinewidth of Single-Crystal Critical Dimension Artifacts, Proc., IEEE International Conference on Microelectronic Test Structures, Kanazawa, 1, JA (Accessed October 21, 2025)