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Electrical Linewidth Test Structures Fabricated in Mono-Crystalline Films for Reference-Material Applications



Michael W. Cresswell, Richard A. Allen, William F. Guthrie, Rathindra Ghoshtagore, Loren W. Linholm, J. J. Sniegowski


The physical widths of reference features incorporated into electrical linewidth test structures patterned in films of mono-crystalline silicon have been determined from Kelvin voltage measurements. The films in which the test structures are patterned are electrically insulated from the bulk-silicon substrate by a layer of silicon dioxide provided by SIMOX (Separation by the Implantation of Oxygen) processing. The motivation is to facilitate the development of linewidth reference materials for Critical-Dimension (CD) metrology-instrument calibration. Appropriate selection of the orientation of the starting silicon and the orientation of the structures' features relative to the crystal lattice enables a lattice-plane-selective etch to generate reference-feature properties of rectangular cross section and atomically planar sidewalls. These properties are highly desirable for CD applications in which feature widths are certified with nanometer-level uncertainty for use by a diverse range of CD instruments. End applications includes the development and calibration of new generations of CD instruments directed at controlling processes for manufacturing devices having sub-quarter-micrometer features.
IEEE Transactions on Semiconductor Manufacturing


CD, linewidth, lithography, reference, SOI, SIMOX


Cresswell, M. , Allen, R. , Guthrie, W. , Ghoshtagore, R. , Linholm, L. and Sniegowski, J. (1998), Electrical Linewidth Test Structures Fabricated in Mono-Crystalline Films for Reference-Material Applications, IEEE Transactions on Semiconductor Manufacturing (Accessed April 24, 2024)
Created April 30, 1998, Updated October 12, 2021