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Search Publications by: Richard A. Allen (Fed)

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Displaying 126 - 150 of 269

Nano- and Atomic-Scale Length Metrology

January 1, 2006
Author(s)
Theodore V. Vorburger, Ronald G. Dixson, Joseph Fu, Ndubuisi George Orji, Shaw C. Feng, Michael W. Cresswell, Richard A. Allen, William F. Guthrie, Wei Chu
We discuss nano-scale length metrology of linewidth, step height, and line edge roughness (LER). These properties are of growing importance to the function and specification of semiconductor devices as the dimensions of semiconductor devices shrink to the

Resistivity of Nanometer-Scale Films and Interconnects: Model and Simulation

October 20, 2005
Author(s)
Emre Yarimbiyik, Harry A. Schafft, Richard A. Allen, Mona Zahgoul, David L. Blackburn
We have developed a highly versatile simulation program for examining the impact of reduced dimensions on resistivity that goes beyond the work of others, e.g. Fuchs [1] and Mayadas and Shatzkes [2]. The program can simulate the effects of surface and

Critical Dimension Reference Features with Sub-Five Nanometer Uncertainty

May 30, 2005
Author(s)
Michael W. Cresswell, Ronald G. Dixson, William F. Guthrie, Richard A. Allen, Christine E. Murabito, Brandon Park, Joaquin (. Martinez, Amy Hunt
The implementation of a new type of HRTEM-imaging (High-Resolution Transmission Electron Microscopy) test structure, and the use of CD-AFM (CD-Atomic Force Microscopy) to serve as the transfer metrology have resulted in reductions in the uncertainties

Comparison of SEM and HRTEM CD-Measurements Extracted from Monocrystalline Tes-Structures Having Feature Linewidths from 40 nm to 240 nm

April 18, 2005
Author(s)
Michael W. Cresswell, Brandon Park, Richard A. Allen, William F. Guthrie, Ronald G. Dixson, Wei Tan, Christine E. Murabito
CD measurements have been extracted from SEM and HRTEM images of the same set of monocrystalline silicon features having linewidths between 40 and 200 nm. The silicon features are incorporated into a new test structure which has been designed to facilitate

Report of Investigation of RM 8111: Single-Crystal Critical Dimension Prototype Reference Materials

March 2, 2005
Author(s)
Michael W. Cresswell, Richard A. Allen, Ronald G. Dixson, William F. Guthrie, Christine E. Murabito, Brandon Park, Joaquin (. Martinez
Staff of the Semiconductor Electronics Division, the Information Technology Laboratory, and the Precision Engineering Laboratory at NIST, in collaboration with VLSI Standards, Inc., of San Jose, California, have developed a new generation of prototype

Non-contact Electrical CD Metrology Sensor for Chrome Photomasks Featuring a Low Temperature Co-fired Ceramic Technology

May 1, 2004
Author(s)
Nadine Guillaume, Richard A. Allen, Michael W. Cresswell, Markku Lahti, Loren W. Linholm, Mona E. Zaghloul
The paper describes a non-contact capacitive-sensor metrology sensor developed to measure minimum feature sizes, also called critical dimensions (CDs), patterned on photomasks that are used in semiconductor device manufacture. Additionally, this paper

Recent Developments in Producing Test-structures for Use as Critical Dimension Reference Materials

March 1, 2004
Author(s)
Richard A. Allen, Ravi I. Patel, Michael W. Cresswell, Christine E. Murabito, Brandon Park, Monica D. Edelstein, Loren W. Linholm
NIST is developing Single-Crystal Critical-Dimension Reference Materials (SCCDRM) which address the need of the semiconductor and semiconductor equipment industries for a well-characterized artifact to serve as the basis for comparing the performance of