Comparison of Sheet-Resistance Measurements Obtained By Standard and Small-Area Four-Point Probing

Published

May 1, 1999

Author(s)

Nadine Guillaume, Michael W. Cresswell, Richard A. Allen, Sarah C. Everist, Loren W. Linholm

Abstract

A modification of the standard four-point probing technique has been developed for measuring the sheet resistance of conducting films. Although the areas of unpatterned film that are required by the new modified technique are significantly less then those normally required with standard four-point probing, the values of sheet resistance provided by the two methods are found to match. The long term goal purpose of this work is to improve the effectiveness of electrical critical-dimension (ECD) metrology in a special application, preferably without committing large surface areas of conducting film exclusively for the purpose of sheet-resistance measurement.

Proceedings Title

Proc., IEEE International Conference on Microelectronic Test Structures

Conference Dates

March 15-18, 1999

Conference Location

Goteborg, 1, SW

Pub Type

Conferences

Download Paper

Local Download

Keywords

reference material, sheet resistance, silicon, SOI, test structure, Van der Pauw

Citation

Guillaume, N. , Cresswell, M. , Allen, R. , Everist, S. and Linholm, L. (1999), Comparison of Sheet-Resistance Measurements Obtained By Standard and Small-Area Four-Point Probing, Proc., IEEE International Conference on Microelectronic Test Structures, Goteborg, 1, SW, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=5777 (Accessed March 16, 2025)