Comparison of Properties of Electrical Test Structures Patterned in BESOI and DIMOX Films for CD Reference-Material Applications

Published

December 31, 1998

Author(s)

Richard A. Allen, Rathindra Ghoshtagore, Michael W. Cresswell, Loren W. Linholm

Abstract

The National Institute of Standards and Technology is exploring the feasibility of using artifacts fabricated on silicon-on-insulator materials (SOI) to quantify methods divergence, for critical dimension metrology applications. Test structures, patterned on two types of (110) SOI materials SIMOX (Separation of IMplantation of OXygen) and BESOI (Bonded-and-Etched-back Silicon-on-Insulator), have been compared. In this paper, we describe results of electrical critical dimension measurements and the relative performance of the test structures fabricated on the two SOI materials.

Proceedings Title

Proc. Intl. Soc. for Optical Engineering (SPIE), Inspection and Process Control XII

Volume

3332

Issue

158

Conference Location

Undefined

Pub Type

Conferences

Keywords

BESOI, CD, linewidth, lithography, reference material, SOI, SIMOX

Citation

Allen, R. , Ghoshtagore, R. , Cresswell, M. and Linholm, L. (1998), Comparison of Properties of Electrical Test Structures Patterned in BESOI and DIMOX Films for CD Reference-Material Applications, Proc. Intl. Soc. for Optical Engineering (SPIE), Inspection and Process Control XII, Undefined (Accessed April 25, 2024)