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Extraction of Sheet-Resistance from Four-Terminal Sheet Resistors in Monocrystalline Films Having Non-Planar Geometries

Published

Author(s)

Michael W. Cresswell, Nadine Guillaume, Richard A. Allen, William F. Guthrie, Rathindra Ghoshtagore, James C. OwenI II, Z. Osborne, N. Sullivan, Loren W. Linholm

Abstract

This paper describes methods for the extraction of sheet resistance from V/I measurements made on four-terminal sheet resistors incorporated into electrical linewidth test structures patterned with non-planar geometries in monocrystalline silicon-on-insulator films. The end application is using the uniquely high repeatability and low cost of electrical CD (Critical Dimension) metrology to serve as a secondary reference in establishing a traceability path for CD-reference artifacts.
Citation
IEEE Transactions on Semiconductor Manufacturing
Volume
12
Issue
2

Keywords

calibration, linewidth, MEMS, metrology, sheet-resistance

Citation

Cresswell, M. , Guillaume, N. , Allen, R. , Guthrie, W. , Ghoshtagore, R. , OwenI II, J. , Osborne, Z. , Sullivan, N. and Linholm, L. (1999), Extraction of Sheet-Resistance from Four-Terminal Sheet Resistors in Monocrystalline Films Having Non-Planar Geometries, IEEE Transactions on Semiconductor Manufacturing (Accessed April 14, 2024)
Created April 30, 1999, Updated October 12, 2021