Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Analysis of Current Flow in Mono-Crystalline Electrical Linewidth Structures

Published

Author(s)

S Smith, I. A. Lindsay, Anthony Walton, Michael W. Cresswell, Loren W. Linholm, Richard A. Allen, M. Fallon, Alan Gundlach

Abstract

The current flow in lightly doped mono-crystalline silicon structures designed for use as low cost secondary reference linewidth standards is investigated. It is demonstrated that surface charge can have a significant effect upon the measurements of linewidth test structures. The effect of surface charge on <110> Greek cross structures is also investigated, and the influence of a gate electrode on the extracted value of sheet resistance demonstrated. It is confirmed that the resulting uncertainty in both of these measurements can be simply overcome by degenerately doping the silicon during the fabrication process.
Proceedings Title
Proc., IEEE International Conference on Microelectronic Test Structures
Conference Dates
March 15-18, 1999
Conference Location
Goteborg, 1, SW

Keywords

critical dimension, linewidth, van de Pauw, sheet resistance

Citation

Smith, S. , Lindsay, I. , Walton, A. , Cresswell, M. , Linholm, L. , Allen, R. , Fallon, M. and Gundlach, A. (1999), Analysis of Current Flow in Mono-Crystalline Electrical Linewidth Structures, Proc., IEEE International Conference on Microelectronic Test Structures, Goteborg, 1, SW (Accessed April 20, 2024)
Created May 31, 1999, Updated October 12, 2021