Allen, R.
and Ghoshtagore, R.
(1998),
Evaluation of Surface Depletion Effects in Single-Crystal Test Structures for Reference Materials Applications, Proc., 1998 International Conference on Characterization and Metrology for ULSI Technology, Gaithersburg, MD, USA
(Accessed April 26, 2024)
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Evaluation of Surface Depletion Effects in Single-Crystal Test Structures for Reference Materials Applications
Published
Author(s)
,
Abstract
Monocrystalline silicon test structures are being investigated for critical dimension (CD) reference materials applications. The goal of this work is to produce samples which do not exhibit the phenomenon of methods divergence, where the measurement of single sample, fabricated in an electrical conductor, by multiple techniques leads to results that differ from one another by more than the total known error budgets of the measurements. In this paper, measurements are described to determine the sources of differences observed between electrical and other measurements.Proceedings Title
Proc., 1998 International Conference on Characterization and Metrology for ULSI Technology
Issue
158
Conference Dates
March 23-27, 1998
Conference Location
Gaithersburg, MD, USA
Pub Type
Conferences
Keywords
critical dimension (CD), linewidth, methods divergence, metrology, reference material, semidconductor processing, surface depletion
Citation
Created December 30, 1998, Updated October 12, 2021