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Extraction of Sheet-Resistance from Four-Terminal Sheet Resistors in Monocrystalline Films Having Non-Planar Geometries

Published

Author(s)

Michael W. Cresswell, Nadine Guillaume, Richard A. Allen, William F. Guthrie, Rathindra Ghoshtagore, James C. OwenI II, Z. Osborne, N. Sullivan, Loren W. Linholm

Abstract

This paper describes methods for the extraction of sheet resistance from V/I measurements made on four-terminal sheet resistors incorporated into electrical linewidth test structures patterned with non-planar geometries in monocrystalline silicon-on-insulator films. The end application is using the uniquely high repeatability and low cost of electrical CD (Critical Dimension) metrology to serve as a secondary reference in establishing a traceability path for CD-reference artifacts.
Proceedings Title
Proc., IEEE International Conference on Microelectronic Test Structures
Conference Dates
March 23-26, 1998
Conference Location
Kanazawa, US

Keywords

calibration, linewidth, MEMS, metrology, sheet-resistance

Citation

Cresswell, M. , Guillaume, N. , Allen, R. , Guthrie, W. , Ghoshtagore, R. , OwenI II, J. , Osborne, Z. , Sullivan, N. and Linholm, L. (1998), Extraction of Sheet-Resistance from Four-Terminal Sheet Resistors in Monocrystalline Films Having Non-Planar Geometries, Proc., IEEE International Conference on Microelectronic Test Structures, Kanazawa, US (Accessed April 17, 2024)
Created December 30, 1998, Updated October 12, 2021