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Search Publications by: David S Simons (Assoc)

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Displaying 51 - 75 of 148

Quantitative Surface Analysis of Fe-Ni Alloy Films by XPS, AES and SIMS

January 1, 2007
Author(s)
K J. Kim, D Moon, C J. Park, David S. Simons, J Greg Gillen, H Jin, H Kang
Quantitative surface analysis of Fe-Ni alloy thin films has been proposed as a new subject for a pilot study by the surface analysis working group of the Consultative Committee for Amount of Substance (CCQM). Three Fe-Ni alloy films with different

Round-Robin Study of Arsenic Implant Dose Measurement in Silicon by SIMS

November 1, 2006
Author(s)
Richard M. Lindstrom, David S. Simons, R Bennett, R. Benbalagh, Bruce S. MacDonald, A. Chew, D. Gehre, H Hasegawa, C. Hitzman, J. Ko, C W. Magee, N. Montgomery, P. Peres, P. Ronsheim, S. Yoshikawa, M. Schuhmacher, W. Stockwell, D. Sykes, M. Tomita, F. Toujou, J. Won

Quantitative Measurement of Arsenic Implant Dose by SIMS

January 1, 2005
Author(s)
David S. Simons, P Chi, K J. Kim
Some issues associated with making quantitative measurements of the arsenic implant dose in silicon by SIMS are described. These include the use of a certified reference material for calibration, the choice of silicon matrix reference species, the matrix

Towards reproducible SCM Image Interpretation

February 1, 2004
Author(s)
Joseph Kopanski, Jay F. Marchiando, Brian G. Rennex, David S. Simons, R P. Chaudhury
SCM images, and the two-dimensional (2-D) dopant profiles extracted from them, show poor reproducibility from laboratory to laboratory. Major factors contributing to SCM image variability include: poor sample surface and oxide quality, excess carrier

Diffusion Barrier Cladding in Si/SiGe Resonant Interband Tunneling Diodes and Their Patterned Growth on PMOS Source/Drain Regions

January 1, 2003
Author(s)
N Jin, A T. Rice, P R. Berger, P E. Thompson, C Rivas, R Lake, S Sudirgo, J J. Kempisty, B Curanovic, S L. Rommel, K D. Hirschman, S K. Kurinec, P Chi, David S. Simons, S.J. Chung
Si/SiGe resonant interband tunnel diodes (RITD) employing delta-doping spikes that demonstrate negative differential resistance (NDR) at room temperature are presented. Efforts have focused on improving the tunnel diode peak-to-valley current ratio (PVCR)