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Search Publications by: David S Simons (Assoc)

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Displaying 26 - 50 of 74

Quantitative Surface Analysis of Fe-Ni Alloy Films by XPS, AES and SIMS

January 1, 2007
Author(s)
K J. Kim, D Moon, C J. Park, David S. Simons, J Greg Gillen, H Jin, H Kang
Quantitative surface analysis of Fe-Ni alloy thin films has been proposed as a new subject for a pilot study by the surface analysis working group of the Consultative Committee for Amount of Substance (CCQM). Three Fe-Ni alloy films with different

Round-Robin Study of Arsenic Implant Dose Measurement in Silicon by SIMS

November 1, 2006
Author(s)
Richard M. Lindstrom, David S. Simons, R Bennett, R. Benbalagh, Bruce S. MacDonald, A. Chew, D. Gehre, H Hasegawa, C. Hitzman, J. Ko, C W. Magee, N. Montgomery, P. Peres, P. Ronsheim, S. Yoshikawa, M. Schuhmacher, W. Stockwell, D. Sykes, M. Tomita, F. Toujou, J. Won

Quantitative Measurement of Arsenic Implant Dose by SIMS

January 1, 2005
Author(s)
David S. Simons, P Chi, K J. Kim
Some issues associated with making quantitative measurements of the arsenic implant dose in silicon by SIMS are described. These include the use of a certified reference material for calibration, the choice of silicon matrix reference species, the matrix

Towards reproducible SCM Image Interpretation

February 1, 2004
Author(s)
Joseph Kopanski, Jay F. Marchiando, Brian G. Rennex, David S. Simons, R P. Chaudhury
SCM images, and the two-dimensional (2-D) dopant profiles extracted from them, show poor reproducibility from laboratory to laboratory. Major factors contributing to SCM image variability include: poor sample surface and oxide quality, excess carrier

Diffusion Barrier Cladding in Si/SiGe Resonant Interband Tunneling Diodes and Their Patterned Growth on PMOS Source/Drain Regions

January 1, 2003
Author(s)
N Jin, A T. Rice, P R. Berger, P E. Thompson, C Rivas, R Lake, S Sudirgo, J J. Kempisty, B Curanovic, S L. Rommel, K D. Hirschman, S K. Kurinec, P Chi, David S. Simons, S.J. Chung
Si/SiGe resonant interband tunnel diodes (RITD) employing delta-doping spikes that demonstrate negative differential resistance (NDR) at room temperature are presented. Efforts have focused on improving the tunnel diode peak-to-valley current ratio (PVCR)

Calibration of a Stopping Power Model for Silicon Based on Analysis of Neutron Depth Profiling and Secondary Ion Mass Spectrometry Measurements

June 1, 2002
Author(s)
Kevin J. Coakley, Huaiyu H. Chen-Mayer, George P. Lamaze, David S. Simons, P E. Thompson
We measure the boron concentration versus depth profile within a silicon sample with four delta-doped planes by secondary ion mass spectrometry. In a neutron depth profiling (NDP) experiment, we illuminate the sample with a neutron beam. Nuclear reactions

P-on-N Si Interband Tunnel Diode Grown by Molecular Beam Epitaxy

January 1, 2001
Author(s)
David S. Simons, P Chi, S L. Rommel, T E. Dillon, K D. Hobart, P E. Thompson, P R. Berger
Si interband tunnel diodes have been successfully fabricated by molecular beam epitaxy and room temperature peak-to-valley current ratios of 1.7 have been achieved. The diodes consist of opposing n- and p-type δ-doped injectors separated by an intrinsic Si

Epitaxial Si-Based Tunnel Diodes

December 1, 2000
Author(s)
P E. Thompson, K D. Hobart, M E. Twigg, S L. Rommel, N Jin, P R. Berger, R Lake, A C. Seabaugh, P Chi, David S. Simons
Tunneling devices in combination with transistors offer a way to extend the performance of existing technologies by increasing circuit speed and decreasing static power dissipation. We have investigated Si-based tunnel diodes grown using molecular beam

Si Resonant Interband Tunnel Diodes Grown by Low-Temperature Molecular Beam Epitaxy

August 1, 1999
Author(s)
P E. Thompson, K D. Hobart, M E. Twigg, G Jernigan, T E. Dillon, S L. Rommel, P R. Berger, David S. Simons, P Chi, R Lake, A C. Seabaugh
Si resonant interband tunnel diodes that demonstrate negative differential resistance at room temperature are presented. The structures were grown using low temperature (320 C) molecular beam epitaxy followed by a post-growth anneal. After a 650 C, 1 min

Atomic Hydrogen for the Formation of Abrupt Sb Doping Profiles in MBE-Grown Si

May 1, 1998
Author(s)
P E. Thompson, C Silvestre, M E. Twigg, G Jernigan, David S. Simons
Previously atomic hydrogen has been shown to be effective in reducing the segregation of Ge on Si[100] during solid source molecular beam epitaxygrowth. In this work we have investigated atomic hydrogen to determine if it is equally effective in reducing