Atomic Hydrogen for the Formation of Abrupt Sb Doping Profiles in MBE-Grown Si

Published

May 1, 1998

Author(s)

P E. Thompson, C Silvestre, M E. Twigg, G Jernigan, David S. Simons

Abstract

Previously atomic hydrogen has been shown to be effective in reducing the segregation of Ge on Si[100] during solid source molecular beam epitaxygrowth. In this work we have investigated atomic hydrogen to determine if it is equally effective in reducing the segregation of Sb on Si[100]. Using secondary ion mass spectrometry, we demonstrated that the co-deposition of atomic hydrogen during Sb doping of Si at 500 C reduced the surface segregation ratio by greater than two orders of magnitude. However, if atomic hydrogen was applied for more than 20 nm of growth, extended defects were formed. In addition, the as-grown Sb-doped layers had a low percentage of electrical activation as measured by capacitance-voltage profiling.

Citation

Thin Solid Films

Volume

321

Pub Type

Journals

Keywords

antimony, atomic hydrogen, molecular beam epitaxy, secondary ion mass spectrometry, silicon, surfactant-assisted growth

Citation

Thompson, P. , Silvestre, C. , Twigg, M. , Jernigan, G. and Simons, D. (1998), Atomic Hydrogen for the Formation of Abrupt Sb Doping Profiles in MBE-Grown Si, Thin Solid Films (Accessed April 19, 2024)