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P-on-N Si Interband Tunnel Diode Grown by Molecular Beam Epitaxy



David S. Simons, P Chi, S L. Rommel, T E. Dillon, K D. Hobart, P E. Thompson, P R. Berger


Si interband tunnel diodes have been successfully fabricated by molecular beam epitaxy and room temperature peak-to-valley current ratios of 1.7 have been achieved. The diodes consist of opposing n- and p-type δ-doped injectors separated by an intrinsic Si spacer. A p-on-n configuration was achieved for the first time using a novel low temperature growth technique that exploits the strong surface segregation behavior of Sb, the n-type dopant, to produce sharp delta-doped profiles adjacent to the intrinsic Si spacer.
Journal of Vacuum Science and Technology B
No. 1


antimony, boron, MBE, peak-to-valley current ratio, segregation, silicon, SIMS, surface


Simons, D. , Chi, P. , Rommel, S. , Dillon, T. , Hobart, K. , Thompson, P. and Berger, P. (2001), P-on-N Si Interband Tunnel Diode Grown by Molecular Beam Epitaxy, Journal of Vacuum Science and Technology B (Accessed June 25, 2024)


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Created January 1, 2001, Updated February 19, 2017