Simons, D.
, Chi, P.
, Rommel, S.
, Dillon, T.
, Hobart, K.
, Thompson, P.
and Berger, P.
(2001),
P-on-N Si Interband Tunnel Diode Grown by Molecular Beam Epitaxy, Journal of Vacuum Science and Technology B
(Accessed April 19, 2024)
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P-on-N Si Interband Tunnel Diode Grown by Molecular Beam Epitaxy
Published
Author(s)
, , S L. Rommel, T E. Dillon, K D. Hobart, P E. Thompson, P R. Berger
Abstract
Si interband tunnel diodes have been successfully fabricated by molecular beam epitaxy and room temperature peak-to-valley current ratios of 1.7 have been achieved. The diodes consist of opposing n- and p-type δ-doped injectors separated by an intrinsic Si spacer. A p-on-n configuration was achieved for the first time using a novel low temperature growth technique that exploits the strong surface segregation behavior of Sb, the n-type dopant, to produce sharp delta-doped profiles adjacent to the intrinsic Si spacer.Citation
Journal of Vacuum Science and Technology B
Volume
19
Issue
No. 1
Pub Type
Journals
Keywords
antimony, boron, MBE, peak-to-valley current ratio, segregation, silicon, SIMS, surface
Citation
Created January 1, 2001, Updated February 19, 2017