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Quantitative Measurement of Arsenic Implant Dose by SIMS
Published
Author(s)
David S. Simons, P Chi, K J. Kim
Abstract
Some issues associated with making quantitative measurements of the arsenic implant dose in silicon by SIMS are described. These include the use of a certified reference material for calibration, the choice of silicon matrix reference species, the matrix normalization method, and minimization of detector count losses. A round-robin study is being conducted by ISO TC201/SC6 to determine the best analytical procedures and the level of interlaboratory agreement for this type of measurement.
Citation
Surface and Interface Analysis
Pub Type
Journals
Keywords
arsenic, depth-profiling, ion implant, round-robin study, silicon, SIMS
Citation
Simons, D.
, Chi, P.
and Kim, K.
(2005),
Quantitative Measurement of Arsenic Implant Dose by SIMS, Surface and Interface Analysis
(Accessed December 11, 2023)