Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Quantitative Measurement of Arsenic Implant Dose by SIMS

Published

Author(s)

David S. Simons, P Chi, K J. Kim

Abstract

Some issues associated with making quantitative measurements of the arsenic implant dose in silicon by SIMS are described. These include the use of a certified reference material for calibration, the choice of silicon matrix reference species, the matrix normalization method, and minimization of detector count losses. A round-robin study is being conducted by ISO TC201/SC6 to determine the best analytical procedures and the level of interlaboratory agreement for this type of measurement.
Citation
Surface and Interface Analysis

Keywords

arsenic, depth-profiling, ion implant, round-robin study, silicon, SIMS

Citation

Simons, D. , Chi, P. and Kim, K. (2005), Quantitative Measurement of Arsenic Implant Dose by SIMS, Surface and Interface Analysis (Accessed November 12, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created January 1, 2005, Updated February 17, 2017