Quantitative Measurement of Arsenic Implant Dose by SIMS
David S. Simons, P Chi, K J. Kim
Some issues associated with making quantitative measurements of the arsenic implant dose in silicon by SIMS are described. These include the use of a certified reference material for calibration, the choice of silicon matrix reference species, the matrix normalization method, and minimization of detector count losses. A round-robin study is being conducted by ISO TC201/SC6 to determine the best analytical procedures and the level of interlaboratory agreement for this type of measurement.
Surface and Interface Analysis
arsenic, depth-profiling, ion implant, round-robin study, silicon, SIMS
, Chi, P.
and Kim, K.
Quantitative Measurement of Arsenic Implant Dose by SIMS, Surface and Interface Analysis
(Accessed December 11, 2023)