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Quantitative Measurement of Arsenic Implant Dose by SIMS

Published

Author(s)

David S. Simons, P Chi, K J. Kim

Abstract

Some issues associated with making quantitative measurements of the arsenic implant dose in silicon by SIMS are described. These include the use of a certified reference material for calibration, the choice of silicon matrix reference species, the matrix normalization method, and minimization of detector count losses. A round-robin study is being conducted by ISO TC201/SC6 to determine the best analytical procedures and the level of interlaboratory agreement for this type of measurement.
Citation
Surface and Interface Analysis

Keywords

arsenic, depth-profiling, ion implant, round-robin study, silicon, SIMS

Citation

Simons, D. , Chi, P. and Kim, K. (2005), Quantitative Measurement of Arsenic Implant Dose by SIMS, Surface and Interface Analysis (Accessed June 19, 2024)

Issues

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Created January 1, 2005, Updated February 17, 2017