Silvestre, C.
, Thompson, P.
, Jernigan, G.
and Simons, D.
(1998),
Boron Incorporation With and Without Atomic Hydrogen During the Growth of Doped Layers on Si(100), Journal of Vacuum Science and Technology A
(Accessed December 14, 2024)
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Boron Incorporation With and Without Atomic Hydrogen During the Growth of Doped Layers on Si(100)
Published
Author(s)
C Silvestre, P Thompson, G Jernigan,
Citation
Journal of Vacuum Science and Technology A
Volume
16
Issue
4
Pub Type
Journals
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created June 30, 1998, Updated October 12, 2021