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High Precision Measurements of Arsenic and Phosphorous Implantation Dose in Silicon by Secondary Ion Mass Spectrometry

Published

Author(s)

P Chi, David S. Simons, J M. McKinley, F A. Stevie, C N. Granger

Abstract

The Metrology section of the 1999 International Technology Roadmap for Semiconductors specifies in-line dopant profile concentration precision requirements ranging from a value of 5% in 1999 to a value of 2% in 2008. These values are to be accomplished with low systematic error. Secondary ion mass spectrometry (SIMS) has demonstrated the capability to meet these requirements for B, As, and P. However, the detailed analytical protocols required to achieve these goals have not been completely specified. This paper reports the parameters that must be controlled to make highly repeatable dose measurements of As and P implants in Si with magnetic sector SIMS instruments. Instrument conditions that were investigated include analytical species, matrix ion species, energy bandpass, and sample holder design. With optimized settings, we demonstrate the ability to distinguish As or P implant doses differing by 5%.
Citation
Journal of Vacuum Science and Technology A
Volume
20
Issue
No. 3

Keywords

depth profiling, energy distribution, high precision measurement, ion implentation, secondary ion mass spectrometry, semiconductor roadmap

Citation

Chi, P. , Simons, D. , McKinley, J. , Stevie, F. and Granger, C. (2002), High Precision Measurements of Arsenic and Phosphorous Implantation Dose in Silicon by Secondary Ion Mass Spectrometry, Journal of Vacuum Science and Technology A (Accessed July 24, 2024)

Issues

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Created June 1, 2002, Updated February 17, 2017