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High Precision Measurements of Arsenic Implantation Dose in Silicon by Secondary Ion Mass Spectrometry

Published

Author(s)

P Chi, David S. Simons, J M. McKinley, F A. Stevie, C N. Granger

Abstract

The Metrology section of the 1999 International Technology Roadmap for Semiconductors (ITRS) specifies in-line dopant profile concentration precision requirements ranging from a value of 5 % in 1999 to a value of 2 % in 2008. These values are to be accomplished with low systematic error. Secondary ion mass spectrometry (SIMS) has a demonstrated capability to meet these requirements for B, As, and P. However, the detailed analytical protocols required to achieve these goals have not been completely specified. This paper reports the parameters that must be controlled to make highly repeatable dose measurements of arsenic implants in silicon with magnetic sector SIMS instruments. Instrument conditions that were investigated include arsenic analytical species, matrix ion species, energy bandpass, and sample holder design. With optimized settings, we demonstrate the ability to distinguish arsenic implant doses differing by 5 %. Low systematic error is achieved by referencing the measurements to NIST SRM 2134, which has a certified arsenic dose value of 7.33 x 1014 cm-2 and an expanded dose uncertainty of only 0.38 %.
Proceedings Title
Characterization and Metrology for ULSI Technology, International Conference | | Characterizatoin and Metrology for ULSI Technology 2000 | AIP
Volume
550
Conference Dates
June 1, 2000
Conference Title
AIP Conference Proceedings

Keywords

depth profile, energy distribution, high precision measurement, ion implantation, SIMS

Citation

Chi, P. , Simons, D. , McKinley, J. , Stevie, F. and Granger, C. (2001), High Precision Measurements of Arsenic Implantation Dose in Silicon by Secondary Ion Mass Spectrometry, Characterization and Metrology for ULSI Technology, International Conference | | Characterizatoin and Metrology for ULSI Technology 2000 | AIP (Accessed February 26, 2024)
Created February 1, 2001, Updated February 17, 2017