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Correlation of End-of-Range Damage Evolution and Transient Enhanced Diffusion of Boron in Regrown Silicon



L S. Robertson, M E. Law, K. S. Jones, L M. Rubin, J Jackson, P Chi, David S. Simons


Amorphization of a n-type Czochralski wafer was achieved using a series of Si+ implants of 30 and 120 kvV, each at a dose of 1X1015 cm2. The Si+ implants produced a 2400 Angstrom} deep amorphous layer, which was then implanted with 4 keV 1 X 1014/cm2B+. Postimplantation anneals were performed in a tube furnace at 750 C, for times ranging from 15 min to 6 h. Secondary ion mass spectrometry was used to monitor the dopant diffusion after annealing. Transmission electron microscopy (TEM) was used to study the EOR defect evolution. Upon annealing, the boron peak showed no clustering, and TED was observed in the entire boron profile. TEM results show that both 311} defects and dislocation loops were present in the EOR damage region. The majority of the 311} defects dissolved in the interval between 15 min and 2 h. Results indicate that 311}defects release interstitials during the time that boron exhibits TED. These results show that there is a strong correlation between 311} dissolution in the EOR and TED in the regrown silicon layer. Quantitative TEM of dislocation loop growth and 311} dissolution indicates that in addition to 311} defects, submicroscopic sources of interstitials may also exist in the EOR which may contribute to TED.
Applied Physics Letters
No. 24


SIMS, transient enhanced diffusion


Robertson, L. , Law, M. , Jones, K. , Rubin, L. , Jackson, J. , Chi, P. and Simons, D. (1999), Correlation of End-of-Range Damage Evolution and Transient Enhanced Diffusion of Boron in Regrown Silicon, Applied Physics Letters (Accessed June 16, 2024)


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Created November 30, 1999, Updated October 12, 2021