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Si Resonant Interband Tunnel Diodes Grown by Low-Temperature Molecular Beam Epitaxy

Published

Author(s)

P E. Thompson, K D. Hobart, M E. Twigg, G Jernigan, T E. Dillon, S L. Rommel, P R. Berger, David S. Simons, P Chi, R Lake, A C. Seabaugh

Abstract

Si resonant interband tunnel diodes that demonstrate negative differential resistance at room temperature are presented. The structures were grown using low temperature (320 C) molecular beam epitaxy followed by a post-growth anneal. After a 650 C, 1 min rapid thermal anneal, the peak to valley current ratio was 2.05 and the peak current density of an 18um diameter diode was 2.3 x 10 A/cm . These diodes are compatible with CMOS integration.
Citation
Applied Physics Letters
Volume
75

Keywords

antimony, boron, delta doping, Esaki diode, negative differential resistance, rapid thermal anneal, secondary ion

Citation

Thompson, P. , Hobart, K. , Twigg, M. , Jernigan, G. , Dillon, T. , Rommel, S. , Berger, P. , Simons, D. , Chi, P. , Lake, R. and Seabaugh, A. (1999), Si Resonant Interband Tunnel Diodes Grown by Low-Temperature Molecular Beam Epitaxy, Applied Physics Letters (Accessed July 13, 2024)

Issues

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Created July 31, 1999, Updated October 12, 2021