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Si Resonant Interband Tunnel Diodes Grown by Low-Temperature Molecular Beam Epitaxy



P E. Thompson, K D. Hobart, M E. Twigg, G Jernigan, T E. Dillon, S L. Rommel, P R. Berger, David S. Simons, P Chi, R Lake, A C. Seabaugh


Si resonant interband tunnel diodes that demonstrate negative differential resistance at room temperature are presented. The structures were grown using low temperature (320 C) molecular beam epitaxy followed by a post-growth anneal. After a 650 C, 1 min rapid thermal anneal, the peak to valley current ratio was 2.05 and the peak current density of an 18um diameter diode was 2.3 x 10 A/cm . These diodes are compatible with CMOS integration.
Applied Physics Letters


antimony, boron, delta doping, Esaki diode, negative differential resistance, rapid thermal anneal, secondary ion


Thompson, P. , Hobart, K. , Twigg, M. , Jernigan, G. , Dillon, T. , Rommel, S. , Berger, P. , Simons, D. , Chi, P. , Lake, R. and Seabaugh, A. (1999), Si Resonant Interband Tunnel Diodes Grown by Low-Temperature Molecular Beam Epitaxy, Applied Physics Letters (Accessed July 13, 2024)


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Created July 31, 1999, Updated October 12, 2021