Thompson, P.
, Hobart, K.
, Twigg, M.
, Jernigan, G.
, Dillon, T.
, Rommel, S.
, Berger, P.
, Simons, D.
, Chi, P.
, Lake, R.
and Seabaugh, A.
(1999),
Si Resonant Interband Tunnel Diodes Grown by Low-Temperature Molecular Beam Epitaxy, Applied Physics Letters
(Accessed October 18, 2025)
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Si Resonant Interband Tunnel Diodes Grown by Low-Temperature Molecular Beam Epitaxy
Published
Author(s)
P E. Thompson, K D. Hobart, M E. Twigg, G Jernigan, T E. Dillon, S L. Rommel, P R. Berger, , , R Lake, A C. Seabaugh
Abstract
Si resonant interband tunnel diodes that demonstrate negative differential resistance at room temperature are presented. The structures were grown using low temperature (320 C) molecular beam epitaxy followed by a post-growth anneal. After a 650 C, 1 min rapid thermal anneal, the peak to valley current ratio was 2.05 and the peak current density of an 18um diameter diode was 2.3 x 10 A/cm . These diodes are compatible with CMOS integration.Citation
Applied Physics Letters
Volume
75
Pub Type
Journals
Keywords
antimony, boron, delta doping, Esaki diode, negative differential resistance, rapid thermal anneal, secondary ion
Citation
Issues
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Created July 31, 1999, Updated October 12, 2021