Robertson, L.
, Lilak, A.
, Law, M.
, Jones, K.
, Kringhoj, P.
, Rubin, L.
, Jackson, J.
, Simons, D.
and Chi, P.
(1997),
The Effect of Dose Rate on Interstitial Release from the End-of-Range Implant Damage Region in Silicon, Applied Physics Letters
(Accessed April 19, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
The Effect of Dose Rate on Interstitial Release from the End-of-Range Implant Damage Region in Silicon
Published
Author(s)
L S. Robertson, A Lilak, M E. Law, K. S. Jones, P. S. Kringhoj, L M. Rubin, J Jackson, ,
Citation
Applied Physics Letters
Volume
71
Pub Type
Journals
Citation
Created February 17, 1997, Updated October 12, 2021