Seraphin, S.
, Krause, S.
, Roitman, P.
, Simons, D.
and Cordts, B.
(1991),
Effect of Annealing Ambient on the Removal of Oxide Precipitates in High-Dose Oxygen-Implanted Silicon, Applied Physics Letters
(Accessed October 3, 2024)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Effect of Annealing Ambient on the Removal of Oxide Precipitates in High-Dose Oxygen-Implanted Silicon
Published
Author(s)
S. Seraphin, S. J. Krause, , , B. F. Cordts
Citation
Applied Physics Letters
Volume
59
Issue
23
Pub Type
Journals
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created December 1, 1991, Updated October 12, 2021