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Effect of Annealing Ambient on the Removal of Oxide Precipitates in High-Dose Oxygen-Implanted Silicon

Published

Author(s)

S. Seraphin, S. J. Krause, Peter Roitman, David S. Simons, B. F. Cordts
Citation
Applied Physics Letters
Volume
59
Issue
23

Citation

Seraphin, S. , Krause, S. , Roitman, P. , Simons, D. and Cordts, B. (1991), Effect of Annealing Ambient on the Removal of Oxide Precipitates in High-Dose Oxygen-Implanted Silicon, Applied Physics Letters (Accessed June 24, 2024)

Issues

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Created December 1, 1991, Updated October 12, 2021