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Effect of Annealing Ambient on the Precipitation Processes in Oxygen-Implanted Silicon-on-Insulator Material, Extended Abstract

Published

Author(s)

Peter Roitman, David S. Simons, S. Visitserngtrakul, C. O. Jung, S. J. Krause
Proceedings Title
Proc., 12th International Congress for Electron Microscopy
Conference Dates
August 12-17, 1990
Conference Location
Seattle, WA, USA

Citation

Roitman, P. , Simons, D. , Visitserngtrakul, S. , Jung, C. and Krause, S. (1990), Effect of Annealing Ambient on the Precipitation Processes in Oxygen-Implanted Silicon-on-Insulator Material, Extended Abstract, Proc., 12th International Congress for Electron Microscopy, Seattle, WA, USA (Accessed May 25, 2024)

Issues

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Created December 30, 1990, Updated October 12, 2021