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The Effect of End of Range Loops on Transient Enhanced Diffusion in Si

Published

Author(s)

K. S. Jones, K. Moller, M. Puga-Lambers, M. Law, David S. Simons, P Chi, B. Freer, J. Bernstein, L. Rubin, R. Simonton, R. G. Elliman, M. Petravic, P. S. Kringhoj
Proceedings Title
Proceedings of the 11th International Conference Ion Implantation Technology
Conference Dates
June 16-21, 1996
Conference Location
Austin, TX

Citation

Jones, K. , Moller, K. , Puga-Lambers, M. , Law, M. , Simons, D. , Chi, P. , Freer, B. , Bernstein, J. , Rubin, L. , Simonton, R. , Elliman, R. , Petravic, M. and Kringhoj, P. (1997), The Effect of End of Range Loops on Transient Enhanced Diffusion in Si, Proceedings of the 11th International Conference Ion Implantation Technology, Austin, TX (Accessed April 24, 2024)
Created April 1, 1997, Updated February 19, 2017