Stevie, F.
, Simons, D.
, McKinley, J.
, McMacken, J.
, Santiesteban, R.
, Flatch, P.
and Becerro, J.
(1998),
Dose Calibration of Ion Implanters for Semiconductor Production, Wiley, Hoboken, NJ
(Accessed December 10, 2024)
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Dose Calibration of Ion Implanters for Semiconductor Production
Published
Author(s)
F A. Stevie, , J M. McKinley, J McMacken, R Santiesteban, P Flatch, J Becerro
Abstract
Absolute dose calibration is important for process simulation and transfer of manufacturing to different production line or locations, but until recently, no viable standards were available. With the creation of a NIST standard for boron, it is now possible to determine the absolute dose of a boron implant with a relative uncertainty of less of 5%. The does of boron ion implants were measured by secondary ion mass spectrometry at two different laboratories using similar analysis protocols. The disagreement between the labs was typically less than 2%. The contributions from both B-10 and B-11 were found to be significant.Citation
Secondary Ion Mass Spectrometry SIMS XI
Publisher Info
Wiley, Hoboken, NJ
Pub Type
Books
Keywords
boron, ion implantation, silicon, SIMS
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created January 31, 1998, Updated October 12, 2021