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Dose Calibration of Ion Implanters for Semiconductor Production



F A. Stevie, David S. Simons, J M. McKinley, J McMacken, R Santiesteban, P Flatch, J Becerro


Absolute dose calibration is important for process simulation and transfer of manufacturing to different production line or locations, but until recently, no viable standards were available. With the creation of a NIST standard for boron, it is now possible to determine the absolute dose of a boron implant with a relative uncertainty of less of 5%. The does of boron ion implants were measured by secondary ion mass spectrometry at two different laboratories using similar analysis protocols. The disagreement between the labs was typically less than 2%. The contributions from both B-10 and B-11 were found to be significant.
Secondary Ion Mass Spectrometry SIMS XI
Publisher Info
Wiley, Hoboken, NJ


boron, ion implantation, silicon, SIMS


Stevie, F. , Simons, D. , McKinley, J. , McMacken, J. , Santiesteban, R. , Flatch, P. and Becerro, J. (1998), Dose Calibration of Ion Implanters for Semiconductor Production, Wiley, Hoboken, NJ (Accessed May 22, 2024)


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Created January 31, 1998, Updated October 12, 2021