Simons, D.
, Chi, P.
, Downing, R.
, Ehrstein, J.
and Knudsen, J.
(1988),
Progress Toward a Semiconductor Depth-Profiling Standard, Proc., SIMS-VI, Secondary Ion Mass Spectrometry Conference, Versailles, 1, FR
(Accessed January 20, 2025)
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.
Progress Toward a Semiconductor Depth-Profiling Standard
Published
Author(s)
, , R. G. Downing, , J. F. Knudsen
Proceedings Title
Proc., SIMS-VI, Secondary Ion Mass Spectrometry Conference
Conference Dates
September 13-18, 1987
Conference Location
Versailles, 1, FR
Pub Type
Conferences
Citation
Issues
If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.
Created December 30, 1988, Updated October 12, 2021