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Search Publications by: Joseph J. Kopanski (Assoc)

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Displaying 76 - 100 of 130

PSPICE Analysis of the Scanning Capacitance Microscope Sensor

April 27, 2003
Author(s)
Gyoung H. Buh, Chi Tran, Joseph Kopanski
A detailed analysis of the capacitance sensor from a scanning capacitance microscope (SCM) is presented. PSPICE circuit simulations are compared with experimental results. The general behavior of the SCM sensor and practical aspects of the sensor-tuning

Capacitive Probe Microscopy

January 15, 2002
Author(s)
Joseph J. Kopanski
A scanning capacitance microscope (SCM) combines a differential capacitance measurement with an atomic force microscope (AFM). The AFM controls the position and contact force of a scanning probe tip, and a sensor simultaneously measures the capacitance

Gate Oxide Formation under Mild Conditions for Scanning Capacitance Microscopy

February 1, 2001
Author(s)
Duncan McBride, Joseph Kopanski
Scanning Capacitance Microscopy (SCM) can be used to measure doping density in silicon with a spatial resolution of about 10 nm. In order to make such measurements on fabricated devices, the device must be cross-sectioned, and an oxide sufficient to form a

Dopant Characterization Round-Robin Study Performed on Two-Dimensional Test Structures Fabricated at Texas Instruments

December 31, 1998
Author(s)
J. Vahakangas, Markku Lahti, M C. Chang, H Edward, C F. Machala, R S. Martin, V Zavyalov, J S. McMurray, C. C. Williams, P DeWolf, Vandevorst, D. Venables, S S. Neogi, D L. Ottaviani, Joseph Kopanski, J F. Machiando, Brian G. Rennex, J N. Nxulamo, Y Li, D J. Thomson
The lack of a two-dimensional (2D) dopant standard, and hence, a priori knowledge of dopant distribution makes it impossible to unambiguously judge accuracy of any experimental or theoretical effort to characterize silicon doping in two dimensions