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Limitations of the Calibration Curve Method for Determining Dopant Profiles from Scanning Capacitance Microscope Measurements

Published

Author(s)

Jay F. Marchiando, Joseph Kopanski, John Albers

Abstract

The calibration or conversion curve method (CCM) refers here to using a database of calculations of the capacitance done for a matrix set of model parameters, such as oxide thickness, uniform dopant density, etc., as one method for interpreting scanning capacitance microscope (SCM) measurements. The method was originally intended to help analyze SCM data for slowly varying dopant profiles, where the condition of quasi charge neutrality could be suitably maintained during SCM measurement. However, when the dopant gradient becomes sufficiently large, the quasi charge neutrality condition becomes less satisfied, and the CCM becomes less accurate (unless the gradient is taken into account in some manner). To help evaluate the limitations of the CCM (without gradient correction) in extracting two-dimensional dopant profiles from simulated SCM data, we analyze two representative ion-implanted steep-gradient dopant profiles currently used in device fabrication. Depending upon the magnitude of the dopant gradient, the CCM results show the dopant profile peak to be both underestimated and displaced. The error in estimating the dopant concentration could be as large as 50% for these representative profiles. The calculations are done for two dimensions.
Citation
Journal of Vacuum Science and Technology
Volume
18
Issue
1

Keywords

differential capacitance, dopant profiling, scanning capacitance microscopy, semiconductor

Citation

Marchiando, J. , Kopanski, J. and Albers, J. (2000), Limitations of the Calibration Curve Method for Determining Dopant Profiles from Scanning Capacitance Microscope Measurements, Journal of Vacuum Science and Technology (Accessed May 27, 2024)

Issues

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Created February 29, 2000, Updated October 12, 2021