Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Practical Metrology Aspects of Scanning Capacitance Microscopy for Silicon 2-D Dopant Profiling, Condensed version

Published

Author(s)

Joseph Kopanski, Jay F. Marchiando, R. Alvis
Proceedings Title
Extended Abstracts of the Electrochemical Society
Conference Dates
May 4-9, 1997
Conference Location
Montreal, 1, CA

Citation

Kopanski, J. , Marchiando, J. and Alvis, R. (1997), Practical Metrology Aspects of Scanning Capacitance Microscopy for Silicon 2-D Dopant Profiling, Condensed version, Extended Abstracts of the Electrochemical Society, Montreal, 1, CA (Accessed December 9, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created December 30, 1997, Updated October 12, 2021