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Comparison of Measured and Modeled Scanning Capacitance Microscopy Images Across P-N Junctions

Published

Author(s)

Joseph Kopanski, Jay F. Marchiando, John Albers, Brian G. Rennex

Abstract

Scanning capacitance microscope (SCM) image contrast measured on ion implanted P+/P and P+/N junction structures with identical dopant profiles, as a function of SCM operating conditions, is compared to a theoretical model of the SCM based on a two-dimensional finite-element solution of Poisson's equation. Measured Δ}C/Δ}V versus bias voltage curves were found to agree well with the theoretical model. For the P+/P structure, the lateral dopant profile is extracted using the model and compared to a Monte Carlo simulation of the implanted profile. The image contrast of the P+/N junction structure and the dependence of the apparent junction location on SCM bias voltage is compared to model predictions calculated using the known dopant profile. The SCM quiescent operating point where the apparent junction location in an SCM image and the actual metallurgical p-n junction coincide is defined.
Proceedings Title
Proc., 1998 International Conference on Characterization and Metrology for ULSI Technology
Conference Dates
March 23-27, 1998
Conference Location
Gaithersburg, MD, USA

Keywords

dopant profile, carrier profile, SCM, scanning capacitance mircoscopy, Poisson's Equation

Citation

Kopanski, J. , Marchiando, J. , Albers, J. and Rennex, B. (1998), Comparison of Measured and Modeled Scanning Capacitance Microscopy Images Across P-N Junctions, Proc., 1998 International Conference on Characterization and Metrology for ULSI Technology, Gaithersburg, MD, USA (Accessed June 22, 2024)

Issues

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Created June 30, 1998, Updated October 12, 2021