Factors Influencing the Capacitance-voltage Characteristics Measured by the Scanning Capacitance Microscope

Published

August 15, 2003

Author(s)

Gyoung H. Buh, Joseph Kopanski, Jay F. Marchiando, Anthony G. Birdwell, Young Kuk

Abstract

A scanning capacitance microscope (SCM) can measure the local capacitance-voltage (C-V) characteristics of a metal-oxide-semiconductor structure formed by the SCM probe-tip and the doped semiconductor. When the SCM is operated in the standard configuration of the atomic force microscope, a laser is focused on the end of the cantilever to monitor the position of the probe-tip. In this configuration, it is found that the stray light from the laser can dramatically affect the measured C-V curve. The difference between the SCM C-V curves measured in this high stray light condition and those measured in the true dark condition are shown and discussed.

Citation

Journal of Applied Physics

Volume

94

Issue

4

Pub Type

Journals

Citation

Buh, G. , Kopanski, J. , Marchiando, J. , Birdwell, A. and Kuk, Y. (2003), Factors Influencing the Capacitance-voltage Characteristics Measured by the Scanning Capacitance Microscope, Journal of Applied Physics (Accessed April 23, 2024)