Factors Influencing the Capacitance-voltage Characteristics Measured by the Scanning Capacitance Microscope
Gyoung H. Buh, Joseph J. Kopanski, Jay F. Marchiando, Anthony Birdwell, Young Kuk
A scanning capacitance microscope (SCM) can measure the local capacitance-voltage (C-V) characteristics of a metal-oxide-semiconductor structure formed by the SCM probe-tip and the doped semiconductor. When the SCM is operated in the standard configuration of the atomic force microscope, a laser is focused on the end of the cantilever to monitor the position of the probe-tip. In this configuration, it is found that the stray light from the laser can dramatically affect the measured C-V curve. The difference between the SCM C-V curves measured in this high stray light condition and those measured in the true dark condition are shown and discussed.
Journal of Applied Physics
, Kopanski, J.
, Marchiando, J.
, Birdwell, A.
and Kuk, Y.
Factors Influencing the Capacitance-voltage Characteristics Measured by the Scanning Capacitance Microscope, Journal of Applied Physics
(Accessed September 27, 2021)