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Factors Influencing the Capacitance-voltage Characteristics Measured by the Scanning Capacitance Microscope

Published

Author(s)

Gyoung H. Buh, Joseph J. Kopanski, Jay F. Marchiando, Anthony Birdwell, Young Kuk

Abstract

A scanning capacitance microscope (SCM) can measure the local capacitance-voltage (C-V) characteristics of a metal-oxide-semiconductor structure formed by the SCM probe-tip and the doped semiconductor. When the SCM is operated in the standard configuration of the atomic force microscope, a laser is focused on the end of the cantilever to monitor the position of the probe-tip. In this configuration, it is found that the stray light from the laser can dramatically affect the measured C-V curve. The difference between the SCM C-V curves measured in this high stray light condition and those measured in the true dark condition are shown and discussed.
Citation
Journal of Applied Physics
Volume
94
Issue
4

Citation

Buh, G. , Kopanski, J. , Marchiando, J. , Birdwell, A. and Kuk, Y. (2003), Factors Influencing the Capacitance-voltage Characteristics Measured by the Scanning Capacitance Microscope, Journal of Applied Physics (Accessed September 27, 2021)
Created August 15, 2003, Updated February 17, 2017