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PSPICE Analysis of the Scanning Capacitance Microscope Sensor

Published

Author(s)

Gyoung H. Buh, Chi Tran, Joseph Kopanski

Abstract

A detailed analysis of the capacitance sensor from a scanning capacitance microscope (SCM) is presented. PSPICE circuit simulations are compared with experimental results. The general behavior of the SCM sensor and practical aspects of the sensor-tuning curve are described. It is found that a stray capacitance decreases the measurement sensitivity and causes the sensor high frequency voltage applied across the tip-sample to fall. We have also calculated and measured the delocalized dC/dV caused by stray capacitance, revealing that this background dC/dV must be accounted for in order to obtain the true localized dC/dV.
Proceedings Title
Proc., Seventh USJ
Conference Dates
April 27-May 1, 2003
Conference Location
Santa Cruz, CA, USA
Conference Title
Seventh International Workshop on Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors

Keywords

doping profiles, PSPICE, scanning capacitance microscope, capacitance measurement

Citation

Buh, G. , Tran, C. and Kopanski, J. (2003), PSPICE Analysis of the Scanning Capacitance Microscope Sensor, Proc., Seventh USJ, Santa Cruz, CA, USA (Accessed June 14, 2024)

Issues

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Created April 26, 2003, Updated October 12, 2021