Buh, G.
, Tran, C.
and Kopanski, J.
(2003),
PSPICE Analysis of the Scanning Capacitance Microscope Sensor, Proc., Seventh USJ, Santa Cruz, CA, USA
(Accessed April 25, 2024)
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PSPICE Analysis of the Scanning Capacitance Microscope Sensor
Published
Author(s)
, Chi Tran,
Abstract
A detailed analysis of the capacitance sensor from a scanning capacitance microscope (SCM) is presented. PSPICE circuit simulations are compared with experimental results. The general behavior of the SCM sensor and practical aspects of the sensor-tuning curve are described. It is found that a stray capacitance decreases the measurement sensitivity and causes the sensor high frequency voltage applied across the tip-sample to fall. We have also calculated and measured the delocalized dC/dV caused by stray capacitance, revealing that this background dC/dV must be accounted for in order to obtain the true localized dC/dV.Proceedings Title
Proc., Seventh USJ
Conference Dates
April 27-May 1, 2003
Conference Location
Santa Cruz, CA, USA
Conference Title
Seventh International Workshop on Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors
Pub Type
Conferences
Keywords
doping profiles, PSPICE, scanning capacitance microscope, capacitance measurement
Citation
Created April 26, 2003, Updated October 12, 2021