PSPICE Analysis of the Scanning Capacitance Microscope Sensor
Gyoung H. Buh, Chi Tran, Joseph Kopanski
A detailed analysis of the capacitance sensor from a scanning capacitance microscope (SCM) is presented. PSPICE circuit simulations are compared with experimental results. The general behavior of the SCM sensor and practical aspects of the sensor-tuning curve are described. It is found that a stray capacitance decreases the measurement sensitivity and causes the sensor high frequency voltage applied across the tip-sample to fall. We have also calculated and measured the delocalized dC/dV caused by stray capacitance, revealing that this background dC/dV must be accounted for in order to obtain the true localized dC/dV.
Proc., Seventh USJ
April 27-May 1, 2003
Santa Cruz, CA, USA
Seventh International Workshop on Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors