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Displaying 1 - 25 of 58

Electro-thermal Simulation of 1200 V 4H-SiC MOSFET Short-Circuit SOA

May 10, 2015
Author(s)
Tam H. Duong, Jose M. Ortiz, David W. Berning, Allen R. Hefner Jr., Sei-Hyung Ryu, John W. Palmour
The purpose of this paper is to introduce a dynamic electro-thermal simulation and analysis approach for device design and short-circuit safe-operating-area (SOA) characterization using a physics-based electro-thermal Saber®* model. Model parameter

Comparison of 4.5 kV SiC JBS and Si PiN Diodes for 4.5 kV Si IGBT Anti-parallel Diode Applications

March 10, 2011
Author(s)
Tam H. Duong, Allen R. Hefner Jr., Karl Hobart, Sei-Hyung Ryu, David Grider, David W. Berning, Jose M. Ortiz, Eugene Imhoff, Jerry Sherbondy
A new 60 A, 4.5 kV SiC JBS diode is presented and its performance is compared to Si PiN diodes used as the anti-parallel diode for 4.5 kV Si IGBTs. The current-voltage, capacitance-voltage, reverse recovery, and reverse leakage characteristics of both

Computer-Controlled Thermal Cycling Tool to Aid in SiC Module Package Characterization

June 30, 2010
Author(s)
Madelaine H. Hernandez, Jose M. Ortiz, Brian J. Grummel, Allen R. Hefner Jr., David W. Berning, Colleen E. Hood, Patrick McCluskey
A software-controlled thermal cycling test system developed for SiC module package characterization is presented. Its interface permits the flexible definition of testing parameters like variable data acquisition rates and customizable cycle transitions

High-Voltage Capacitance Measurement System for SiC Power MOSFETs

September 24, 2009
Author(s)
Parrish Ralston, Tam H. Duong, Nanying Yang, David W. Berning, Colleen E. Hood, Allen R. Hefner Jr., Kathleen Meehan
Adequate modeling of a power MOSFET is dependent on accurate characterization of the inter-electrode capacitances. With the advent of high voltage silicon carbide (SiC) power MOSFETs, it has become important to develop a measurement system that can perform

High-Voltage Isolated Gate Drive Circuit for 10 kV, 100 A SiC MOSFET/JBS Power Modules

June 2, 2008
Author(s)
David W. Berning, Tam H. Duong, Jose M. Ortiz, Angel Rivera, Allen R. Hefner Jr.
A high-current, high-voltage-isolated gate drive circuit developed for characterization of high-voltage, high-frequency 10 kV, 100 A SiC MOSFET/JBS half-bridge power modules is presented and described. Gate driver characterization and simulation have shown

Generalized Test Bed for High-Voltage, High-Power SiC Device Characterization

October 1, 2006
Author(s)
David W. Berning, Allen R. Hefner Jr., J J. Rodriguez, Colleen E. Hood, Angel Rivera
A generalized 25 kV test bed developed to characterize high-voltage, high-power SiC devices is described. The test bed features containment of all high voltage circuits and the device under test (DUT) within a clear plastic interlocked safety box. A fast

Recent Advances in High-Voltage, High-Frequency Silicon-Carbide Power Device

October 1, 2006
Author(s)
Allen R. Hefner Jr., Ryu Sei-Hyung, Hull Brett, David W. Berning, Colleen E. Hood, Jose M. Ortiz-Rodriguez, Angel Rivera-Lopez, Tam H. Duong, Adwoa Akuffo, Madelaine H. Hernandez
The emergence of High-Voltage, High-Frequency (HV-HF) Silicon-Carbide (SiC) power devices is expected to revolutionize commercial and military power distribution and conversion systems. The DARPA Wide Bandgap Semiconductor Technology (WBST) High Power

Computer-Controlled Characterization of High-Voltage, High-Frequency SiC Devices

July 1, 2006
Author(s)
Jose M. Ortiz-Rodriguez, Allen R. Hefner Jr., David W. Berning, Colleen E. Hood, S. Olcum
Silicon carbide (SiC) power devices have begun to emerge recently with a performance that is superior to that of silicon power devices. Therefore, the push to higher power and higher voltage applications also comes with it. This work addresses the need for

Metrology for High-Voltage, High-Speed Silicon-Carbide Power Devices

April 4, 2005
Author(s)
Allen R. Hefner Jr., David W. Berning, Colleen E. Hood
Performance metrics and test instrumentation needs for emerging high-voltage, high-speed SiC power devices are described. Unique power device and package thermal measurement test systems and parameter extraction methods are introduced, and applied to

Compact Models for Silicon Carbide Power Devices

October 1, 2004
Author(s)
Ty R. McNutt, Allen R. Hefner Jr., Alan Mantooth, David W. Berning, Ranbir Singh
The development of compact silicon carbide (SiC) power semiconductor device models for circuit simulation is described. The work detailed herein has been used to model power Schottky, Merged-PiN-Schottky, PiN diode, and MOSFET models. In these models, the

Lumped-Parameter Thermal Modeling of an IPEM using Thermal Component Models

August 15, 2004
Author(s)
J J. Rodriguez, Allen R. Hefner Jr., David W. Berning, M Velez-Reyes, Madelaine H. Hernandez, Jorge Gonz?lez
A thermal model for the CPES IPEM Gen. II is presented. The selected approach is the simulation of the thermal behavior of an experimental IPEM testbed using the 1D finite difference method. An equivalent electrical network representation of the thermal

Mems-Based Embedded Sensor Virtual Components for SOC

June 24, 2004
Author(s)
Muhammad Afridi, Allen R. Hefner Jr., David W. Berning, Colleen E. Hood, Ankush Varma, Bruce Jacob, Stephen Semancik
The design and implementation of a monolithic MEMS-based (Micro Electro Mechanical Systems) gas sensor virtual component is described. A bulk micromachining technique is used to create suspended microhotplate structures. The thermal properties of the

Micro-Differential Scanning Calorimeter for Combustible Gas Sensing

January 1, 2004
Author(s)
Richard E. Cavicchi, G Poirier, N H. Tea, Muhammad Y. Afridi, David W. Berning, Allen R. Hefner Jr., John S. Suehle, Michael Gaitan, Stephen Semancik, Christopher B. Montgomery
A micron-scale differential scanning calorimeter (mDSC) has been produced on a silicon chip allowing for microscopic differential scanning calorimetry measurements on small samples. The device consists of a suspended rectangular microhotplate with sample

MEMS-based Embedded Sensor Virtual Components for SoC

November 25, 2003
Author(s)
Muhammad Afridi, Allen R. Hefner Jr., David W. Berning, Colleen E. Hood, Ankush Varma, Bruce Jacob, Stephen Semancik
Advancement in MEMS-based sensors brings a new challenge for system-on-a-chip (SoC) design integration where analog and digital circuits coexist on a common substrate with the actual sensing platform. Integration of these MEMS-based sensors into an SoC

EMI Characterization with Parasitic Modeling for a Permanent Magnet Motor Drive

October 12, 2003
Author(s)
Xudong Huang, Pepa Elton, Jih-Sheng Lai, Allen R. Hefner Jr., David W. Berning, Shaotang Chen, Thomas Nehl
In this paper , a permanent magnet ac motor drive is tested extensively, and the prominent frequencies are identified for their relationship with the noise sources and their propagation paths. Switching characteristics of the power MOSFETs are evaluated

High Speed IGBT Module Transient Thermal Response Measurements for Model Validation

October 12, 2003
Author(s)
David W. Berning, John V. Reichl, Allen R. Hefner Jr., Mora Hernandez, Colleen E. Hood, Jih-Sheng Lai
A measurement system operates a multi-chip insulated gate bipolar transistor (IGBT) that is part of an integrated power electronic module (IPEM) in a high-pulsed-power linear mode for validation of dynamic thermal models. It is found that the gate-cathode

The Role of Carrier Lifetime in Forward Bias Degradation of 4H-SiC PiN Diodes

October 5, 2003
Author(s)
Allen R. Hefner Jr., Ty R. McNutt, David W. Berning, Ranbir Singh, Adwoa Akuffo
Abstract. The role of excess carrier lifetime reduction in the mechanism for on-state voltage (Vf) degradation of high voltage 4H-SiC PiN diodes is investigated. A method is developed to electrically monitor the emitter, base, and end region excess carrier

Silicon Carbide Power MOSFET Model and Parameter Extraction Sequence

June 11, 2003
Author(s)
Ty R. McNutt, Allen R. Hefner Jr., Alan Mantooth, David W. Berning, Sei-Hyung Ryu
A compact circuit simulator model is used to describe the performance of a 2000-V, 5-A 4-H Silicon Carbide (SiC) power DiMOSFET and to perform a detailed comparison with the performance of a widely used 400-V, 5-A Silicon (Si) power MOSFET. The model's

A Monolithic CMOS Microhotplate-based Gas Sensor System

December 1, 2002
Author(s)
Muhammad Afridi, John S. Suehle, Mona E. Zaghloul, David W. Berning, Allen R. Hefner Jr., Richard E. Cavicchi, Stephen Semancik, C B. Montgomery, C J. Taylor
A monolithic CMOS microhotplate-based conductance type gas sensor system is described. A bulk micromachining technique is used to create suspended microhotplate structures. The thermal properties of the microhotplates include a one-millisecond thermal time

Large Area, Ultra-high Voltage 4H-SiC PiN Rectifiers

December 1, 2002
Author(s)
Ranbir Singh, Kenneth G. Irvine, D C. Capell, James Richmond, David W. Berning, Allen R. Hefner Jr., John W. Palmour
This paper reports the design, fabrication, and high temperature characteristics of 1 mm 2, 4 mm 2, and 9 mm 2 4H-SiC rectifiers with 6 kV, 5 kV, and 10 kV blocking voltage respectively. These results were obtained from two lots in an effort to increase