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Computer-Controlled Characterization of High-Voltage, High-Frequency SiC Devices



Jose M. Ortiz-Rodriguez, Allen R. Hefner Jr., David W. Berning, Colleen E. Hood, S. Olcum


Silicon carbide (SiC) power devices have begun to emerge recently with a performance that is superior to that of silicon power devices. Therefore, the push to higher power and higher voltage applications also comes with it. This work addresses the need for new device metrology computer tools that can aid in the special SiC measurement requirements of high speed combined with high voltage. A description of a developed computer-controlled instrumentation interface required to adequately characterize these new devices is provided, and examples of measurement results are presented
Proceedings Title
Proceedings of the IEEE COMPEL Workshop 2006
Conference Dates
July 16-19, 2006
Conference Location
Troy, NY, USA
Conference Title


device characterization, High Frequency, High Power, power semiconductor, Silicon Carbide, user interface


Ortiz-Rodriguez, J. , Hefner Jr., A. , Berning, D. , Hood, C. and Olcum, S. (2006), Computer-Controlled Characterization of High-Voltage, High-Frequency SiC Devices, Proceedings of the IEEE COMPEL Workshop 2006, Troy, NY, USA, [online], (Accessed June 14, 2024)


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Created June 30, 2006, Updated October 12, 2021