Computer-Controlled Characterization of High-Voltage, High-Frequency SiC Devices
Jose M. Ortiz-Rodriguez, Allen R. Hefner Jr., David W. Berning, Colleen E. Hood, S. Olcum
Silicon carbide (SiC) power devices have begun to emerge recently with a performance that is superior to that of silicon power devices. Therefore, the push to higher power and higher voltage applications also comes with it. This work addresses the need for new device metrology computer tools that can aid in the special SiC measurement requirements of high speed combined with high voltage. A description of a developed computer-controlled instrumentation interface required to adequately characterize these new devices is provided, and examples of measurement results are presented
, Hefner Jr., A.
, Berning, D.
, Hood, C.
and Olcum, S.
Computer-Controlled Characterization of High-Voltage, High-Frequency SiC Devices, Proceedings of the IEEE COMPEL Workshop 2006, Troy, NY, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32380
(Accessed December 3, 2023)