Computer-Controlled Characterization of High-Voltage, High-Frequency SiC Devices

Published

July 1, 2006

Author(s)

Jose M. Ortiz-Rodriguez, Allen R. Hefner Jr., David W. Berning, Colleen E. Hood, S. Olcum

Abstract

Silicon carbide (SiC) power devices have begun to emerge recently with a performance that is superior to that of silicon power devices. Therefore, the push to higher power and higher voltage applications also comes with it. This work addresses the need for new device metrology computer tools that can aid in the special SiC measurement requirements of high speed combined with high voltage. A description of a developed computer-controlled instrumentation interface required to adequately characterize these new devices is provided, and examples of measurement results are presented

Proceedings Title

Proceedings of the IEEE COMPEL Workshop 2006

Conference Dates

July 16-19, 2006

Conference Location

Troy, NY, USA

Conference Title

IEEE COMPEL 2006

Pub Type

Conferences

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Keywords

device characterization, High Frequency, High Power, power semiconductor, Silicon Carbide, user interface

Citation

Ortiz-Rodriguez, J. , Hefner Jr., A. , Berning, D. , Hood, C. and Olcum, S. (2006), Computer-Controlled Characterization of High-Voltage, High-Frequency SiC Devices, Proceedings of the IEEE COMPEL Workshop 2006, Troy, NY, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32380 (Accessed October 15, 2025)