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Computer-Controlled Characterization of High-Voltage, High-Frequency SiC Devices

Published

Author(s)

Jose M. Ortiz-Rodriguez, Allen R. Hefner Jr., David W. Berning, Colleen E. Hood, S. Olcum

Abstract

Silicon carbide (SiC) power devices have begun to emerge recently with a performance that is superior to that of silicon power devices. Therefore, the push to higher power and higher voltage applications also comes with it. This work addresses the need for new device metrology computer tools that can aid in the special SiC measurement requirements of high speed combined with high voltage. A description of a developed computer-controlled instrumentation interface required to adequately characterize these new devices is provided, and examples of measurement results are presented
Proceedings Title
Proceedings of the IEEE COMPEL Workshop 2006
Conference Dates
July 16-19, 2006
Conference Location
Troy, NY, USA
Conference Title
IEEE COMPEL 2006

Keywords

device characterization, High Frequency, High Power, power semiconductor, Silicon Carbide, user interface

Citation

Ortiz-Rodriguez, J. , Hefner Jr., A. , Berning, D. , Hood, C. and Olcum, S. (2006), Computer-Controlled Characterization of High-Voltage, High-Frequency SiC Devices, Proceedings of the IEEE COMPEL Workshop 2006, Troy, NY, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32380 (Accessed June 14, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created June 30, 2006, Updated October 12, 2021