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Recent Advances in High-Voltage, High-Frequency Silicon-Carbide Power Device

Published

Author(s)

Allen R. Hefner Jr., Ryu Sei-Hyung, Hull Brett, David W. Berning, Colleen E. Hood, Jose M. Ortiz-Rodriguez, Angel Rivera-Lopez, Tam H. Duong, Adwoa Akuffo, Madelaine H. Hernandez

Abstract

The emergence of High-Voltage, High-Frequency (HV-HF) Silicon-Carbide (SiC) power devices is expected to revolutionize commercial and military power distribution and conversion systems. The DARPA Wide Bandgap Semiconductor Technology (WBST) High Power Electronics (HPE) program is spearheading the development of HV-HF SiC power semiconductor technology. In this paper, some of the recent advances in development of HV-HF devices by the HPE program are presented and the circuit performance enabled by these devices is discussed.
Proceedings Title
Proc., IEEE Industry Applications Society (IAS) Annual Meeting
Conference Dates
October 8-12, 2006
Conference Location
Tampa, FL, USA
Conference Title
IEEE Industrial Applications Society Meeting

Keywords

", " "DARPA HPE, " "HPE, " "HV-HF (High-voltage, high-frequency power devcies, " "power devices, " "solid state power substations, " "switch mode power conversion, " forward-bia degradation, "silicon-carbide, ) "wide bandgap semiconductor

Citation

Hefner Jr., A. , Sei-Hyung, R. , Brett, H. , Berning, D. , Hood, C. , Ortiz-Rodriguez, J. , Rivera-Lopez, A. , Duong, T. , Akuffo, A. and Hernandez, M. (2006), Recent Advances in High-Voltage, High-Frequency Silicon-Carbide Power Device, Proc., IEEE Industry Applications Society (IAS) Annual Meeting, Tampa, FL, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32365 (Accessed May 19, 2024)

Issues

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Created September 30, 2006, Updated October 12, 2021