Compact Models for Silicon Carbide Power Devices

Published

October 1, 2004

Author(s)

Ty R. McNutt, Allen R. Hefner Jr., Alan Mantooth, David W. Berning, Ranbir Singh

Abstract

The development of compact silicon carbide (SiC) power semiconductor device models for circuit simulation is described. The work detailed herein has been used to model power Schottky, Merged-PiN-Schottky, PiN diode, and MOSFET models. In these models, the static and dynamic performance of the power SiC devices requires specific attention to the low-doped, voltage blocking drift region; the relatively low channel transconductance in MOS devices; the injection efficiency of p-n junctions; the relatively low intrinsic carrier concentration; the incomplete ionization of dopants; and the temperature dependent material properties. The modeling techniques required to account for each of these characteristics is described in this work.

Citation

Journal of Solid-state Electronics

Volume

48

Issue

10-11

Pub Type

Journals

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Keywords

circuit simulation, diode, MOSFET, semiconductor device model, Silicon carbide

Citation

McNutt, T. , Hefner Jr., A. , Mantooth, A. , Berning, D. and Singh, R. (2004), Compact Models for Silicon Carbide Power Devices, Journal of Solid-state Electronics, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=31576 (Accessed October 14, 2025)