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Comparison of 4.5 kV SiC JBS and Si PiN Diodes for 4.5 kV Si IGBT Anti-parallel Diode Applications

Published

Author(s)

Tam H. Duong, Allen R. Hefner Jr., Karl Hobart, Sei-Hyung Ryu, David Grider, David W. Berning, Jose M. Ortiz, Eugene Imhoff, Jerry Sherbondy

Abstract

A new 60 A, 4.5 kV SiC JBS diode is presented and its performance is compared to Si PiN diodes used as the anti-parallel diode for 4.5 kV Si IGBTs. The current-voltage, capacitance-voltage, reverse recovery, and reverse leakage characteristics of both diode types are measured using recently developed high-voltage, high-frequency device test systems. The devices are also characterized as the anti-parallel diode for a 4.5 kV Si IGBT using a recently developed high-voltage, high-frequency double-pulse switching test system. The results indicates that the SiC JBS diodes are far superior to the Si PiN diodes, resulting in an order of magnitude less switching loss and substantially less current spike stress. Validated models are also developed for the 4.5 kV SiC JBS diode and Si PiN diode.
Proceedings Title
Proceedings of the Applied Power Electronics Conference and Exposition 2011
Conference Dates
March 6-10, 2011
Conference Location
Fort Worth, TX
Conference Title
APEC 2011 (The Applied Power Electronics Conference and Exposition)

Keywords

Silicon Carbide, medium-voltage, high-frequency, Junction Barrier Schottky (JBS), hybrid half-bridge module, power systems.

Citation

Duong, T. , Hefner, A. , Hobart, K. , Ryu, S. , Grider, D. , Berning, D. , Ortiz, J. , Imhoff, E. and , J. (2011), Comparison of 4.5 kV SiC JBS and Si PiN Diodes for 4.5 kV Si IGBT Anti-parallel Diode Applications, Proceedings of the Applied Power Electronics Conference and Exposition 2011, Fort Worth, TX, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=907368 (Accessed January 26, 2022)
Created March 10, 2011, Updated February 19, 2017