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High-Voltage Isolated Gate Drive Circuit for 10 kV, 100 A SiC MOSFET/JBS Power Modules

Published

Author(s)

David W. Berning, Tam H. Duong, Jose M. Ortiz, Angel Rivera, Allen R. Hefner Jr.

Abstract

A high-current, high-voltage-isolated gate drive circuit developed for characterization of high-voltage, high-frequency 10 kV, 100 A SiC MOSFET/JBS half-bridge power modules is presented and described. Gate driver characterization and simulation have shown that the circuit satisfies the requirements needed for the DARPA WBST-HPE Solid State Power Substation (SSPS). These requirements include 30 kV voltage-isolation for the high-side MOSFETs, very low capacitance between the ground and floating driver sides, and 20 kHz operation. Block diagram and detailed discussion of principles of operation of the gate drive circuit are given, together with measured and simulated waveforms of performance evaluation.
Proceedings Title
Proc., IEEE Industry Applications Society (IAS) Annual Meeting
Conference Dates
October 5-9, 2008
Conference Location
Edmonton, 1, CA

Citation

Berning, D. , Duong, T. , Ortiz, J. , Rivera, A. and Hefner Jr., A. (2008), High-Voltage Isolated Gate Drive Circuit for 10 kV, 100 A SiC MOSFET/JBS Power Modules, Proc., IEEE Industry Applications Society (IAS) Annual Meeting, Edmonton, 1, CA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=33062 (Accessed January 26, 2022)
Created June 1, 2008, Updated October 12, 2021