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High Speed IGBT Module Transient Thermal Response Measurements for Model Validation

Published

Author(s)

David W. Berning, John V. Reichl, Allen R. Hefner Jr., Mora Hernandez, Colleen E. Hood, Jih-Sheng Lai

Abstract

A measurement system operates a multi-chip insulated gate bipolar transistor (IGBT) that is part of an integrated power electronic module (IPEM) in a high-pulsed-power linear mode for validation of dynamic thermal models. It is found that the gate-cathode voltage can be used as a time-dependent temperature sensitive parameter (TSP). Temperature calibrations for the TSP must be performed on the same IGBT, and under the same conditions for which a transient measurement is to be made. Good agreement between measured transient heating and simulation is obtained for the initial portion of a heating pulse, but the measurement indicates a higher temperature than the simulation as the heating progresses. Measurements and simulations on a single IGBT chip isolated from the others in the multi-chip module indicate the lack of current sharing between the chips in a multi-chip module when operated in the linear mode. Good agreement is obtained between measurement and simulation when only one chip is considered. Improved current sharing between chips in a multi-chip module occurs when higher currents and lower voltages are used in the measurement.
Proceedings Title
Proc., IEEE Industry Applications Society (IAS) Annual Meeting
Conference Dates
October 12-16, 2003
Conference Location
Salt Lake City, UT, USA

Keywords

dynamic thermal model, IGBT, thermal resistance, transient heating, current sharing., Power electronic module

Citation

Berning, D. , Reichl, J. , Hefner Jr., A. , Hernandez, M. , Hood, C. and Lai, J. (2003), High Speed IGBT Module Transient Thermal Response Measurements for Model Validation, Proc., IEEE Industry Applications Society (IAS) Annual Meeting, Salt Lake City, UT, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=31382 (Accessed May 19, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created October 11, 2003, Updated October 12, 2021