Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

High Speed IGBT Module Transient Thermal Response Measurements for Model Validation



David W. Berning, John V. Reichl, Allen R. Hefner Jr., Mora Hernandez, Colleen E. Hood, Jih-Sheng Lai


A measurement system operates a multi-chip insulated gate bipolar transistor (IGBT) that is part of an integrated power electronic module (IPEM) in a high-pulsed-power linear mode for validation of dynamic thermal models. It is found that the gate-cathode voltage can be used as a time-dependent temperature sensitive parameter (TSP). Temperature calibrations for the TSP must be performed on the same IGBT, and under the same conditions for which a transient measurement is to be made. Good agreement between measured transient heating and simulation is obtained for the initial portion of a heating pulse, but the measurement indicates a higher temperature than the simulation as the heating progresses. Measurements and simulations on a single IGBT chip isolated from the others in the multi-chip module indicate the lack of current sharing between the chips in a multi-chip module when operated in the linear mode. Good agreement is obtained between measurement and simulation when only one chip is considered. Improved current sharing between chips in a multi-chip module occurs when higher currents and lower voltages are used in the measurement.
Proceedings Title
Proc., IEEE Industry Applications Society (IAS) Annual Meeting
Conference Dates
October 12-16, 2003
Conference Location
Salt Lake City, UT, USA


dynamic thermal model, IGBT, thermal resistance, transient heating, current sharing., Power electronic module


Berning, D. , Reichl, J. , Hefner Jr., A. , Hernandez, M. , Hood, C. and Lai, J. (2003), High Speed IGBT Module Transient Thermal Response Measurements for Model Validation, Proc., IEEE Industry Applications Society (IAS) Annual Meeting, Salt Lake City, UT, USA, [online], (Accessed May 19, 2024)


If you have any questions about this publication or are having problems accessing it, please contact

Created October 11, 2003, Updated October 12, 2021