High Speed IGBT Module Transient Thermal Response Measurements for Model Validation

Published

October 12, 2003

Author(s)

David W. Berning, John V. Reichl, Allen R. Hefner Jr., Mora Hernandez, Colleen E. Hood, Jih-Sheng Lai

Abstract

A measurement system operates a multi-chip insulated gate bipolar transistor (IGBT) that is part of an integrated power electronic module (IPEM) in a high-pulsed-power linear mode for validation of dynamic thermal models. It is found that the gate-cathode voltage can be used as a time-dependent temperature sensitive parameter (TSP). Temperature calibrations for the TSP must be performed on the same IGBT, and under the same conditions for which a transient measurement is to be made. Good agreement between measured transient heating and simulation is obtained for the initial portion of a heating pulse, but the measurement indicates a higher temperature than the simulation as the heating progresses. Measurements and simulations on a single IGBT chip isolated from the others in the multi-chip module indicate the lack of current sharing between the chips in a multi-chip module when operated in the linear mode. Good agreement is obtained between measurement and simulation when only one chip is considered. Improved current sharing between chips in a multi-chip module occurs when higher currents and lower voltages are used in the measurement.

Proceedings Title

Proc., IEEE Industry Applications Society (IAS) Annual Meeting

Conference Dates

October 12-16, 2003

Conference Location

Salt Lake City, UT, USA

Pub Type

Conferences

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Keywords

dynamic thermal model, IGBT, thermal resistance, transient heating, current sharing., Power electronic module

Citation

Berning, D. , Reichl, J. , Hefner Jr., A. , Hernandez, M. , Hood, C. and Lai, J. (2003), High Speed IGBT Module Transient Thermal Response Measurements for Model Validation, Proc., IEEE Industry Applications Society (IAS) Annual Meeting, Salt Lake City, UT, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=31382 (Accessed October 11, 2025)