Electro-thermal Simulation of 1200 V 4H-SiC MOSFET Short-Circuit SOA
Tam H. Duong, Jose M. Ortiz, David W. Berning, Allen R. Hefner Jr., Sei-Hyung Ryu, John W. Palmour
The purpose of this paper is to introduce a dynamic electro-thermal simulation and analysis approach for device design and short-circuit safe-operating-area (SOA) characterization using a physics-based electro-thermal Saber®* model. Model parameter extraction, simulation, and validation results are given for several commercially available 4H-silicon carbide (SiC) power MOSFETs with a voltage rating of 1200 V and with current ratings of 31.6 A and 42 A. The electro-thermal model and simulations are used to analyze the short-circuit SOA including the measured failure time (tfailure) and simulated device internal junction temperature (Tj) at failure for different gate voltages (VGS) and drain voltages (VDS).
May 10-14, 2015
electro-thermal simulation, model validation, MOSFET, short-circuit, silicon carbide, SOA
, Ortiz, J.
, Berning, D.
, Hefner, A.
, Ryu, S.
and W., J.
Electro-thermal Simulation of 1200 V 4H-SiC MOSFET Short-Circuit SOA, ISPSD 2015 , Kowloon Shangri-La, -1
(Accessed June 28, 2022)