Electro-thermal Simulation of 1200 V 4H-SiC MOSFET Short-Circuit SOA

Published

May 10, 2015

Author(s)

Tam H. Duong, Jose M. Ortiz, David W. Berning, Allen R. Hefner Jr., Sei-Hyung Ryu, John W. Palmour

Abstract

The purpose of this paper is to introduce a dynamic electro-thermal simulation and analysis approach for device design and short-circuit safe-operating-area (SOA) characterization using a physics-based electro-thermal Saber®* model. Model parameter extraction, simulation, and validation results are given for several commercially available 4H-silicon carbide (SiC) power MOSFETs with a voltage rating of 1200 V and with current ratings of 31.6 A and 42 A. The electro-thermal model and simulations are used to analyze the short-circuit SOA including the measured failure time (tfailure) and simulated device internal junction temperature (Tj) at failure for different gate voltages (VGS) and drain voltages (VDS).

Proceedings Title

ISPSD 2015

Conference Dates

May 10-14, 2015

Conference Location

Kowloon Shangri-La

Pub Type

Conferences

Keywords

electro-thermal simulation, model validation, MOSFET, short-circuit, silicon carbide, SOA

Citation

Duong, T. , Ortiz, J. , Berning, D. , Hefner, A. , Ryu, S. and W., J. (2015), Electro-thermal Simulation of 1200 V 4H-SiC MOSFET Short-Circuit SOA, ISPSD 2015 , Kowloon Shangri-La, -1 (Accessed June 13, 2025)