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Metrology for High-Voltage, High-Speed Silicon-Carbide Power Devices

Published

Author(s)

Allen R. Hefner Jr., David W. Berning, Colleen E. Hood

Abstract

Performance metrics and test instrumentation needs for emerging high-voltage, high-speed SiC power devices are described. Unique power device and package thermal measurement test systems and parameter extraction methods are introduced, and applied to assess performance of recently developed 10-kV SiC MOSFETs and PiN diodes.
Proceedings Title
GOMAC Digest of Technical Papers
Conference Dates
April 4-7, 2005
Conference Location
Las Vegas, NV, USA
Conference Title
GOMACTech

Keywords

high-voltage, measurement systems, performance metrics, power semiconductor, Silicon-carbide

Citation

Hefner Jr., A. , Berning, D. and Hood, C. (2005), Metrology for High-Voltage, High-Speed Silicon-Carbide Power Devices, GOMAC Digest of Technical Papers, Las Vegas, NV, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=31918 (Accessed July 21, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created April 3, 2005, Updated October 12, 2021