NOTICE: Due to a lapse in annual appropriations, most of this website is not being updated. Learn more.

Form submissions will still be accepted but will not receive responses at this time. Sections of this site for programs using non-appropriated funds (such as NVLAP) or those that are excepted from the shutdown (such as CHIPS and NVD) will continue to be updated.

U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

PUBLICATIONS

Metrology for High-Voltage, High-Speed Silicon-Carbide Power Devices

Published

Author(s)

Allen R. Hefner Jr., David W. Berning, Colleen E. Hood

Abstract

Performance metrics and test instrumentation needs for emerging high-voltage, high-speed SiC power devices are described. Unique power device and package thermal measurement test systems and parameter extraction methods are introduced, and applied to assess performance of recently developed 10-kV SiC MOSFETs and PiN diodes.
Proceedings Title
GOMAC Digest of Technical Papers
Conference Dates
April 4-7, 2005
Conference Location
Las Vegas, NV, USA
Conference Title
GOMACTech
Pub Type
Conferences

Download Paper

Local Download

Keywords

high-voltage, measurement systems, performance metrics, power semiconductor, Silicon-carbide
Electronics and Advanced communications

Citation

Hefner Jr., A. , Berning, D. and Hood, C. (2005), Metrology for High-Voltage, High-Speed Silicon-Carbide Power Devices, GOMAC Digest of Technical Papers, Las Vegas, NV, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=31918 (Accessed October 16, 2025)

Issues

If you have any questions about this publication or are having problems accessing it, please contact [email protected].

Created April 3, 2005, Updated October 12, 2021
Was this page helpful?