Hefner Jr., A.
, Berning, D.
and Hood, C.
(2005),
Metrology for High-Voltage, High-Speed Silicon-Carbide Power Devices, GOMAC Digest of Technical Papers, Las Vegas, NV, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=31918
(Accessed December 5, 2024)
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Metrology for High-Voltage, High-Speed Silicon-Carbide Power Devices
Published
Author(s)
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Abstract
Performance metrics and test instrumentation needs for emerging high-voltage, high-speed SiC power devices are described. Unique power device and package thermal measurement test systems and parameter extraction methods are introduced, and applied to assess performance of recently developed 10-kV SiC MOSFETs and PiN diodes.Proceedings Title
GOMAC Digest of Technical Papers
Conference Dates
April 4-7, 2005
Conference Location
Las Vegas, NV, USA
Conference Title
GOMACTech
Pub Type
Conferences
Download Paper
Keywords
high-voltage, measurement systems, performance metrics, power semiconductor, Silicon-carbide
Citation
Issues
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Created April 3, 2005, Updated October 12, 2021