Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Metrology for High-Voltage, High-Speed Silicon-Carbide Power Devices



Allen R. Hefner Jr., David W. Berning, Colleen E. Hood


Performance metrics and test instrumentation needs for emerging high-voltage, high-speed SiC power devices are described. Unique power device and package thermal measurement test systems and parameter extraction methods are introduced, and applied to assess performance of recently developed 10-kV SiC MOSFETs and PiN diodes.
Proceedings Title
GOMAC Digest of Technical Papers
Conference Dates
April 4-7, 2005
Conference Location
Las Vegas, NV, USA
Conference Title


high-voltage, measurement systems, performance metrics, power semiconductor, Silicon-carbide


Hefner Jr., A. , Berning, D. and Hood, C. (2005), Metrology for High-Voltage, High-Speed Silicon-Carbide Power Devices, GOMAC Digest of Technical Papers, Las Vegas, NV, USA, [online], (Accessed July 21, 2024)


If you have any questions about this publication or are having problems accessing it, please contact

Created April 3, 2005, Updated October 12, 2021