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High-Voltage Capacitance Measurement System for SiC Power MOSFETs

Published

Author(s)

Parrish Ralston, Tam H. Duong, Nanying Yang, David W. Berning, Colleen E. Hood, Allen R. Hefner Jr., Kathleen Meehan

Abstract

Adequate modeling of a power MOSFET is dependent on accurate characterization of the inter-electrode capacitances. With the advent of high voltage silicon carbide (SiC) power MOSFETs, it has become important to develop a measurement system that can perform and record high-voltage capacitance versus voltage measurements on these devices. This paper describes measurement apparatus that safely and accurately allows high voltage capacitance voltage (CV) measurements to be performed. The measurements are based on conventional LCR meter CV techniques but with added circuitry to interface the LCR meter to high voltage bias sources. The effects of the added circuitry are studied theoretically and the CV measurement accuracy is verified with experimentation. High voltage capacitance voltage measurements are presented for both silicon and SiC power MOSFETs.
Proceedings Title
2009 IEEE Energy Conversion Congress and Exposition
Conference Dates
September 20-24, 2009
Conference Location
San Jose, CA, US
Conference Title
IEEE Energy Conversion Congress and Exposition (ECCE)

Keywords

Capacitance, CoolMOSTM, CV measurement, high-voltage, LCR meter, power MOSFET, silicon carbide

Citation

Ralston, P. , Duong, T. , Yang, N. , Berning, D. , Hood, C. , Hefner Jr., A. and Meehan, K. (2009), High-Voltage Capacitance Measurement System for SiC Power MOSFETs, 2009 IEEE Energy Conversion Congress and Exposition, San Jose, CA, US, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=903137 (Accessed April 14, 2024)
Created September 23, 2009, Updated October 12, 2021