Automated Parameter Extraction Software For High-Voltage, High-Frequency SiC Power MOSFETs

Published

July 1, 2006

Author(s)

Tam H. Duong, Allen R. Hefner Jr., David W. Berning

Abstract

Previously developed IMPACT software tools are extended to include the material parameters and device structures of SiC power devices. These software tools extract the data necessary establish a library of SiC power device component models and provide a method for quantitatively comparing different device types and establishing performance metrics for device development. The SiC--IMPACT parameter extraction sequence is demonstrated using several 10 kV SiC power MOSFET device design types and the results are compared with results for 2-kV SiC Power MOSFETs and for commercial Silicon Power MOSFETs with voltage blocking capabilities of 55 V, 400 V, and 1 kV.

Proceedings Title

Proceedings of the IEEE COMPEL 2006 Workshop

Conference Dates

July 16-19, 2006

Conference Location

Troy, NY, USA

Conference Title

IEEE COMPEL Workshop (COMPEL?06)

Pub Type

Conferences

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Keywords

circuit simulator models, High-voltage, High-Frequency (HV-HF), material parameters, parameter extraction, power conversion, Power devices, power MOSFETs, SiC--IMPACT, silicon carbide

Citation

Duong, T. , Hefner Jr., A. and Berning, D. (2006), Automated Parameter Extraction Software For High-Voltage, High-Frequency SiC Power MOSFETs, Proceedings of the IEEE COMPEL 2006 Workshop, Troy, NY, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32376 (Accessed October 18, 2025)