Duong, T.
, Hefner Jr., A.
and Berning, D.
(2006),
Automated Parameter Extraction Software For High-Voltage, High-Frequency SiC Power MOSFETs, Proceedings of the IEEE COMPEL 2006 Workshop, Troy, NY, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32376
(Accessed April 25, 2024)
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Automated Parameter Extraction Software For High-Voltage, High-Frequency SiC Power MOSFETs
Published
Author(s)
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Abstract
Previously developed IMPACT software tools are extended to include the material parameters and device structures of SiC power devices. These software tools extract the data necessary establish a library of SiC power device component models and provide a method for quantitatively comparing different device types and establishing performance metrics for device development. The SiC--IMPACT parameter extraction sequence is demonstrated using several 10 kV SiC power MOSFET device design types and the results are compared with results for 2-kV SiC Power MOSFETs and for commercial Silicon Power MOSFETs with voltage blocking capabilities of 55 V, 400 V, and 1 kV.Proceedings Title
Proceedings of the IEEE COMPEL 2006 Workshop
Conference Dates
July 16-19, 2006
Conference Location
Troy, NY, USA
Conference Title
IEEE COMPEL Workshop (COMPEL?06)
Pub Type
Conferences
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Keywords
circuit simulator models, High-voltage, High-Frequency (HV-HF), material parameters, parameter extraction, power conversion, Power devices, power MOSFETs, SiC--IMPACT, silicon carbide
Citation
Created June 30, 2006, Updated October 12, 2021