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Automated Parameter Extraction Software For High-Voltage, High-Frequency SiC Power MOSFETs

Published

Author(s)

Tam H. Duong, Allen R. Hefner Jr., David W. Berning

Abstract

Previously developed IMPACT software tools are extended to include the material parameters and device structures of SiC power devices. These software tools extract the data necessary establish a library of SiC power device component models and provide a method for quantitatively comparing different device types and establishing performance metrics for device development. The SiC--IMPACT parameter extraction sequence is demonstrated using several 10 kV SiC power MOSFET device design types and the results are compared with results for 2-kV SiC Power MOSFETs and for commercial Silicon Power MOSFETs with voltage blocking capabilities of 55 V, 400 V, and 1 kV.
Proceedings Title
Proceedings of the IEEE COMPEL 2006 Workshop
Conference Dates
July 16-19, 2006
Conference Location
Troy, NY, USA
Conference Title
IEEE COMPEL Workshop (COMPEL?06)

Keywords

circuit simulator models, High-voltage, High-Frequency (HV-HF), material parameters, parameter extraction, power conversion, Power devices, power MOSFETs, SiC--IMPACT, silicon carbide

Citation

Duong, T. , Hefner Jr., A. and Berning, D. (2006), Automated Parameter Extraction Software For High-Voltage, High-Frequency SiC Power MOSFETs, Proceedings of the IEEE COMPEL 2006 Workshop, Troy, NY, USA, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=32376 (Accessed June 19, 2024)

Issues

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Created June 30, 2006, Updated October 12, 2021