Silicon Carbide Power MOSFET Model and Parameter Extraction Sequence

Published

June 11, 2003

Author(s)

Ty R. McNutt, Allen R. Hefner Jr., Alan Mantooth, David W. Berning, Sei-Hyung Ryu

Abstract

A compact circuit simulator model is used to describe the performance of a 2000-V, 5-A 4-H Silicon Carbide (SiC) power DiMOSFET and to perform a detailed comparison with the performance of a widely used 400-V, 5-A Silicon (Si) power MOSFET. The model's channel current expressions are unique in that they include the channel regions at the corner's of the square or hexagonal cells that turn on at lower gate voltages, and the enhanced linear region transconductance due to diffusion in the nonuniformly doped channel. It is shown that the model accurately describes the static and dynamic performance of both the Si and SiC devices, and that the diffusion enhanced channel conductance is essential to describe the SiC DiMOSFET on-state characteristics. The detailed device comparisons reveal that both the on-state performance and switching performance at 25 :C are similar between the 400-V Si and 2000-V SiC MOSFETs, with the exception that the SiC device requires twice the gate drive voltage. The main difference between the devices is that the SiC has a 5 times higher voltage rating. At higher temperatures (above 100 :C), the Si device has a severe reduction in conduction capability whereas the SiC on-resistance is only minimally affected.

Proceedings Title

Proc., Power Electronics Specialist Conference

Conference Location

Acapulco, 1, MX

Conference Title

Power Electronics Specialist Conference

Pub Type

Conferences

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Keywords

compact model, parameter extraction, SiC, Silicon carbide DiMOSFET

Citation

McNutt, T. , Hefner Jr., A. , Mantooth, A. , Berning, D. and Ryu, S. (2003), Silicon Carbide Power MOSFET Model and Parameter Extraction Sequence, Proc., Power Electronics Specialist Conference, Acapulco, 1, MX, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=31326 (Accessed September 7, 2024)