2009 FCMN Presentations

Because of the large interest in the talks given at this Conference and as a service to the semiconductor community, the organizers have made the slides from many of the talks presented available here. These slides should be considered the sole property of the speaker. Please do not alter or reproduce any of the slides presented.

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The Conference organizers would like to thank each of the speakers who have made their slides available!

• Overview Of 3D Integration Requirements
  Sitaram Arkalgud, SEMATECH
• Synchrotron-Based Nanocharacterization
  Pierre Bleuet, European Synchrotron Radiation Facility
• Characterization of Integrated Nano Materials
  Amal Chabli, CEA-LETI
• Research Challenges for CMOS Scaling: Industry Directions
  T.C. Chen, IBM
• Metrology for Emerging Materials, Devices, and Structures: Graphene as an Example
  Alain Diebold, College of Nanoscale Science and Engineering, SUNY Albany
• A 3D Stacked Nanowire Technology - Applications in Advanced CMOS and Beyond
  Thomas Ernst, CEA-LETI
• Boron Nanowires for Flexible Electronics and Field Emission
  Hongjun Gao and Jifa Tian, Institute of Physics, CAS, Beijing, China
• Application of TOF-SIMS and LEIS for the Characterization of Ultra-Thin Films
  Thomas Grehl, ION-TOF GmbH
• Mask Metrology – Current and Future Challenges
  Greg Hughes, SEMATECH
• Innovation: the 4th Factor of Production
  G. Dan Hutcheson, VLSI Research, Inc.
• Dark-Field Holography for the Measurement of Strain at the Nanoscale
  Martin Hytch, CEMES-CNRS, nMat Group
• Aberration-Corrected Electron Microscopy for Nanoelectronics Applications
  Christian Kisielowski, National Center for Electron Microscopy
• Nanoscale Measurement Methods for Novel Material Characterization
  J. Alex Liddle, CNST, NIST
• Challenges and Opportunities for Modeling and Simulation
  Mark Lundstrom, Network for Computational Nanotechnology, Purdue University
• Scanning Single Electron Transistor Microscopy on Graphene
  Jens Martin, Harvard University
• Nanotechnology: Impact on Metrology
  Meyya Meyyapan, NASA Ames Research Center
• Simulations of Scatterometry Down to 22 nm Structure Sizes and Beyond
  Wolfgang Osten, University Stuttgart
• Understanding Imaging and Metrology with the Helium Ion Microscope
  Michael Postek, NIST
• Nanoelectronics Landscape In Europe: New Opportunities for Research and Innovation
  Gisele Roesems, European Commission, DG Information Society and Media
• Conference Opening Slides
  David Seiler, NIST
• Improved Resolution and New Analysis Capabilities
  Michael Steigerwald, Carl Zeiss SMT
• Enabling Technologies for <20nm Generations
  Hans Stork, Applied Materials
• Progress towards Low Vacuum Critical Dimension Metrology
  Brad Thiel, CNSE
• FINFET Doping: Fabrication and Metrology Challenges
  Wilfried Vandervorst, IMEC
• Scaling Effects on Ferro-Electrics: Application in Nanoelectronics and Characterization
  Bertrand Vilquin and Brice Gautier, Université de Lyon
• Facts and Artifacts in Atom Probe Tomography
  Francois Vurpillot, GPM UMR 6634, Universite de Rouen, ERIS
• Overview of the Nanoelectronics Research Initiative
  Jeff Welser, SRC Nanoelectronics Research Initiative
• Energy Filtered PEEM
  Konrad Winkler, Omicron NanoTechnology GmbH
• Cross Sectional Characterization of Planar and Non-Planar Nanostructures Using X-Ray Scattering
  Wen-li Wu, NIST
• X-Ray Microscopy for Interconnect Characterization
  Wenbing Yun, CTO