Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

2022 FCMN Presentations

Invited Oral Presentations
Poster Presentations
Abstract Book

Because of the large interest in the presentations given at this Conference and as a service to the semiconductor community, the organizers have made the slides from many of the talks and posters presented available here. These slides should be considered the sole property of the speaker/presenter. Please do not alter or reproduce any of the slides presented.

Adobe Acrobat Reader will be needed to view these documents. If you do not have this program, you may download it free of charge (link is external). The software is identified in order to assist users of this information service. In no case does such identification imply recommendation or endorsement by the National Institute of Standards and Technology.

The Conference organizers would like to thank each of the presenters who have made their slides available! Additional talks and posters will be added as we obtain permission from the speakers/authors.

Invited Oral Presentations


Frontiers of Challenge = Opportunity for the Semiconductor Industry
Dan Hutcheson, VLSI Research

From Deep Scaling to Deep Intelligence 
Rajiv Joshi, IBM

Quantum Computation with Superconducting Qubits
Jeffrey Welser, IBM

Industry Trends

A New Paradigm of Process Control Solutions for Advanced Semiconductor Devices 
Sang Hyun Han, Nova

CD-Driving In-Fab High Aspect Ratio Memory Solutions with CD-SAXS
Jon Madsen, KLA Corporation

Advanced Manufacturing using Virtual Metrology and Equipment Intelligence
David Fried, Lam Research

Microscopies I: New Developments in Chemical/Property Characterization

Latest Developments in X-ray Metrology for Semiconductor Structures
Juliette van der Meer, Bruker

The Reverse-Sample-Tip SPM approach: A Paradigm Shift in Data Collection
Umberto Celano, Imec

Time-Resolved Transmission Electron Microscopy from 1 Hz to 10 GHz in Stroboscopic Mode
June Lau, National Institute of Standards and Technology


New Developments in Atom Probe Tomography
David Larson, Cameca Instruments, Inc.

Recent Advances in Electron Tomography and Applications in the Semiconductor Industry
Jean-Paul Barnes, CEA-Leti

High Volume 3D SEM Metrology on Advanced Memory
David Tien, ThermoFisher

New Developments in Chemical/Electrical Characterization

Methods for Achieving Atomic-Scale Analytical Tomography
Brian Gorman, Colorado School of Mines

Ultra Low Energy SIMS Depth Profiling of 2D Materials
Sylwia Kozdra, Łukasiewicz - IMiF

Photoelectron Spectroscopy in Device Technology: from XPS to HAXPES
Olivier Renault, CEA-Leti

Microscopies II: New Developments in Dimensional Characterization

Advanced Electron Microscopy Techniques to Investigate New Semiconductor-Related
Materials and Devices
Yu-Tsun Shao, Cornell Univ.

Xray Metrology Challenges for the Semiconductor Industry
Joseph Kline, NIST

New Techniques for Emerging Devices / Beyond CMOS

Characterization and Metrology for Silicon Photonic Quantum Computing
Vimal Kamineni, PSIQuantum

Advanced Manufacturing Metrology

Using Deep UV Wavelength Broadband Plasma Optical Inspection for EUV Print Check and High
NA EUV Development
Yalin Xiong, KLA-Tencor

Observing Invisible Electrical Fails with eBeam DirectScan
Tomek Brozek and Marcin Strojwas, PDF Solutions

The Status of Actinic Patterned Mask Inspection for EUV Lithography
Arosha Goonesekera, LaserTec Inc.

EUV and Advanced Patterning

Soft X-Ray Scatterometry: At-Resolution, 3D Metrology for the EUV Era
Christina Porter, ASML

Extending Optical Critical Dimension Metrology into the Mid-Infrared Range
Andy Antonelli, ONTO

Ebeam Technology for CD and Overlay Addresses 2D Scaling Challenges and 3D Edge
Placement Errors
Ofer Adan, AMAT

Advanced Packaging

Fast and High-resolution Micro-XCT and Nano-XCT Imaging of Advanced Packaging Structures
Using New X-ray Sources
Bjoern Hansson, Excillum

In-situ Micro-DCB / Nano-XCT Test to Ensure the Robustness of Leading-edge Cu/ULK BEOL Stacks
Kristina Kutukova, Fraunhofer IKTS

High Throughput (<Minutes) Sub-Micron 3D X-ray for Failure Analysis & Wafer Level Packaging
WenBing Yun, Sigray

Emerging Materials and Devices

Raman and PL for Nanoscale Materials Characterization and Metrology
Thomas Nuytten, Imec

Measurement Challenges for Scaling Superconductor-based Quantum Computers
Peter Hopkins, National Institute of Standards and Technology

Characterization of 2D Materials by ARPES at imec
Paul van der Heide, Imec

Spintronics-Based Devices

Development of NV Magnetometry for Spin Mapping at the Atomic Scale
Mathieu Munsch, Qnami

TEM Imaging of Magnetic Domains, Memory Devices, etc.
David Cooper, CEA-Leti

Poster Presentations

001, Thin EUV Photoresist Layers for Microelectronic Devices: Pivotal Benefits of the Orbitrap™ Mass Analyzer for Accurate Analysis
V. Spampinato1, A. Franquet1, D. De Simone1, I. Pollentier1, A. Pirkl2, H. Oka3, and P. van der Heide1
1IMEC, Kapeldreef 75, 3001 Leuven, Belgium
2IONTOF GmbH, 48149 Muenster, Germany
3Electronic Materials Research Laboratories, FUJIFILM Corporation, Shizuoka 421-0396, Japan

002, A Correlative TOF-SIMS & XPS Protocol for Analysis of Organic Light-Emitting Diodes Layers
C. Guyot, N. Gambacorti, J.P. Barnes, O. Renault, and T. Maindron
Univ. Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France

003, Scanning Microwave Impedance Microscopy for Nanoscale Characterization and Metrology of Semiconductor Devices
Nicholas Antoniou1 and Peter De Wolf2
1PrimeNano Inc. 4701 Patrick Henry Dr., Santa Clara, CA
2Bruker Nano Surfaces & Metrology, 112 Robin Hill Road, Santa Barbara, CA

004, A Correlative Metrology Flow for Grains Analysis in Poly-Si Vertical Channel of 3D NAND Architectures
U. Celano1,2, T. Hantschel1, D. Verreck1, S.V. Palayam1, A. Arreghini1, A.D.L. Humphris3,4, M. Tedaldi3, C. O’Sullivan3, J.P. Hole3, P. Favia1, C. Drijbooms1, G. Van den bosch1, M. Rosmeulen1, and P. van der Heide1
1imec, Leuven, Belgium
2University of Twente, Enschede, The Netherlands
3Infinitesima Ltd., Hitching Court, Abingdon UK
4School of Physics, University of Bristol

005, Dopant Activation Evaluation in Si:P by Scanning Spreading Resistance Microscopy and Differential Hall Effect Metrology
Abhijeet Joshi1, Umberto Celano2,3, Lennaert Wouters2, Alexis Franquet2, Valentina Spampinato2, Paul van der Heide2, Marc Schaekers2, and Bulent M. Basol1
1Active Layer Parametrics (ALP), Scotts Valley, CA
2IMEC, Kapeldreef 75, 3001, Leuven, Belgium
3Faculty of Science and Technology and MESA+ Institute for Nanotechnology, University of Twente, Enschede, The Netherlands

006, Comparison of Dopant Activation in Si as Characterized by Spreading Resistance Profiling (SRP) and Differential Hall Effect Metrology (DHEM)
Kun-Lin Lin1, Chia-He Chang1, Abhijeet Joshi2, and Bulent M. Basol2
1Taiwan Semiconductor Research Institute (TSRI), National Applied Research Laboratories, Hsinchu 300091, Taiwan
2Active Layer Parametrics (ALP), 5500 Butler Lane, Scotts Valley, CA

007, Improved Geometrical Correction in Micro Four-point Probe Measurements with Three Omega Correction
Neetu Rani Lamba1, Braulio Beltrán-Pitarch1,2, Benny Guralnik2, Ole Hansen3, Nini Pryds1, and Dirch Hjorth Petersen1
1Department of Energy Conversion and Storage, Denmark Technical University (DTU), Building 310, DK-2800 Kgs Lyngby, Denmark
2CAPRES - a KLA company, Diplomvej 373B, DK-2800 Kgs. Lyngby, Denmark

008, AKONIS: SIMS Excellence Brought To The Fab
AS. Robbes1, O. Dulac1, K. Soulard1, R. Liu1, S. Choi1, and D. Jacobson2
1CAMECA, 29 quai des grésillons 92622 Gennevilliers Cedex
2CAMECA Instruments Inc., 5500 Nobel Drive, Madison, WI, USA

009, Successes and Challenges in Applications of a Laboratory-Based Scanning XPS/HAXPES Instrument
K. Artyushkova1, J.E. Mann1, B. Schmidt1, A.Vanleenhove2, T.Conard2, P. -M. Deleuze3, and O. Renault3
1Physical Electronics Inc., 18725 Lake Drive E, Chanhassen, MN 55317, USA
2IMEC, 3001 Leuven, Belgium
3Univ. Grenoble-Alpes, CEA, Leti, 38000 Grenoble, France

010, Characterization of Electronic Materials Using the PHI VersaProbe 4 Multi-Technique XPS Scanning Microprobe
J. E. Mann, B. Schmidt, and K. Artyushkova
Physical Electronics, 18725 Lake Drive East, Chanhassen, MN

011, Robust, Quantitative IR-AFM For Use In An In-FAB Multimodal Metrology Scheme
M.S. Selman1, R.W. Herfst1, D. Piras1, S. van Luijn2, and M.H. van Es1
1Optomechatronics, TNO, Stieltjesweg 1, 2628CK, Delft, The Netherlands
2Optics, TNO, Stieltjesweg 1, 2628CK, Delft, The Netherlands

012, Mueller-matrix Scattered-field Microscopy for the Measurement of Finite Deep Sub-wavelength Nanostructures
Xiuguo Chen, Cai Wang, Tianjuan Yang, Jing Hu, Jiahao Zhang, and Shiyuan Liu
State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan 430074, China

013, A See-Through Metrology Toolbox for Fast Gate-All-Around Device Characterization
J. Bogdanowicz1, Y. Oniki1, K. Kenis1, T. Nuytten1, S. Sergeant1, A. Franquet1, V. Spampinato1, T. Conard1, I. Hoflijk1, D. Cerbu1, D. Van den Heuvel1, G. F. Lorusso1, H. Mertens1, B. Briggs1, R. Delhougne1, J. Hung2, R. Koret2, D. Fishman2, I. Turovets2, N. Meir2, K. Houchens3, M. Elizof3, G. Santoro3, A.-L. Charley1, and P. Leray1
1imec, Leuven, Belgium
2Nova Measuring Instruments Ltd., Israel
3Applied Materials Israel, Ltd. (Israel)

014, In-line Multi-scale Thickness And Roughness Characterization For FD-SOI HVM
E. Cela, J.-M.Billiez, M.Bene, and O.Pfersdorff
SOITEC, Parc Technologique des Fontaines, 38190 Bernin, France

015, Thin Films and Nano-gratings Study Using X-ray Standing Waves Excited by an in-lab X-ray Source
K. Matveevskii1, K.V. Nikolaev2, S.N. Yakunin2, R. Fallica3, M.D. Ackermann1, and I.A. Makhotkin1
1MESA+ Institute for Nanotechnology, University of Twente, Enschede, the Netherlands
2NRC Kurchatov Institute, Moscow, Russia
3IMEC, Leuven, Belgium

016, Rapid, Semi-Quantitative Elemental Depth Profiling Using Plasma Profiling Time-Of-Flight Mass Spectrometry
J-P Barnes1, Y. Mazel1, A. Tempez2, S. Legendre2, and E. Nolot1
1Univ. Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France
2HORIBA France SAS, Palaiseau, France

017, Turn-Key Compressed Sensing System for Electron Microscopy
E.L. Principe1, J.J. Hagen1, B.W. Kempshall2, K.E. Scammon2, Z. Russel3, M. Therezien3, T. McIntee3, S. DiDona3, and A. Stevens4
1Synchrotron Research, Inc.
2PanoScientific, LLC
3Ion Innovations
4Optimal Sensing

018, SEM Charging of Floating Metal Structures in Dielectric
Matthew Hauwiller1, Charlie Mann1, Luca Grella2, Kai Zhu2, Liang Huang2, Peter Mach1, Tony Gao1, Brent Voigt1, and Karen Terry1
1Seagate Technology, 7801 Computer Ave, Minneapolis, MN
2KLA Corporation, 1 Technology Dr, Milpitas, CA

019, An Analysis of Polymer Nanoparticle Size Distribution Using Cryo-EM and a Comparison to Other Techniques
Suwen Liu, Courtney Culkins, Audrey Froelich, and Benjamin Newcomb
Entegris, Inc. 129 Concord Road, Billerica, MA

020, Actinic EUV Mask Inspection via Coherent Diffractive Imaging Using Tabletop High Harmonic Sources
Bin Wang1, Michael Tanksalvala1, Nathan Brooks1, Clayton Bargsten2, Grant Buckingham2, Margaret Murnane1, and Henry Kapteyn1,2
1JILA, University of Colorado Boulder and NIST, 440 UCB, Boulder, CO
2KMLabs Inc., 4775 Walnut St., Building 102, Boulder, CO

021, Localization Microscopy for Process Control in Nanoelectronic Manufacturing
Craig R. Copeland, Ronald G. Dixson, Andrew C. Madison, Adam L. Pintar, B. Robert Ilic, and Samuel M. Stavis
National Institute of Standards and Technology, Gaithersburg, MD

022, An Unconventional Tradespace of Focused-Ion-Beam Machining
Andrew C. Madison1, John S. Villarrubia1, Kuo-Tang Liao1,2, Joshua Schumacher1, Kerry Siebein1, B. Robert Ilic1, J. Alexander Liddle1, and Samuel M. Stavis1
1National Institute of Standards and Technology, Gaithersburg, MD
2University of Maryland, College Park, MD

023, X-ray CD: Powerful Metrology Solution for HAR Memory Structure
Jin Zhang, Khaled Ahmadzai, Peter Kawakami, Oscar del Carpio, Leandro Campos, Matt Davis, and Osman Sorkhabi
Lam Research Corporation, Fremont, CA

024, Slicing Through Thin Samples at Atomic Resolution
Ioannis Alexandrou1, Maarten Wirix1, and Sean Zumwalt2
1Thermo Fisher Scientific, De Schakel 2, 5651 GH, Eindhoven, The Netherlands
2Thermo Fisher Scientific, 5350 NE Dawson Creek Dr, Hillsboro, OR 97124, USA

025, Defect Inspection in Semiconductor Image Using Histogram Fitting and Neural Networks
Jinkyu Yu1, Songhee Han2, and Chang-Ock Lee1
1Department of Mathematical Sciences, KAIST, Daejeon 34141, Korea
2Samsung Electronics, Yongin, Kyungki-do 17113, Korea

026, Modeling and Model Validation for Electron Beam Nanometrology
John S. Villarrubia, Glenn Holland, and András E. Vladár
National Institute of Standards and Technology, Microsystems and Nanotechnology Division, 100 Bureau Dr., Gaithersburg, MD

027, A Metrology Scanning Electron Microscope for Traceable Measurements
Bradley Damazo1, András E. Vladár1, Olivier Marie-Rose2,1 and John Kramar1
1National Institute of Standards and Technology, Microsystems & Nanotechnology Division, 100 Bureau Drive Gaithersburg, MD
2Prometheus Computing, LLC, 110 Buzzard's Roost Road, Cullowhee, NC

028, Oxidation of Copper in the Presence of Graphene
Mykhailo Savchak, Ieva Narkeviciute, and Bhadri Varadarajan
Lam Research Corporation, Tualatin, OR

029, Studying Diamond Content In Microwave Nanocrystalline Diamond Film by XRD and Ellipsometer
Lixia Rong, Thai Cheng Chua, Christian Valencia, Vicknesh Sahmuganathan, and Biao Liu
Applied Materials, 3100 Bowers Avenue, Santa Clara, CA

030, Quantifying & Controlling 3D Device Processes With Mass Metrology
Hendrik Hans1 and Pierre Morin2
1Lam Research

031, Operando Metrology for Real Time Monitoring of Complex Optical Stacks
R. Elizalde1, J-P. Nieto1, C. Licitra1, J. Fort2, K. Paul2, T. Egan2, E. Budiarto2, and E. Nolot1
1Univ. Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France
2Applied Materials



034, Liquid-metal-jet and High-resolution X-ray Technology for Nanoelectronics Characterization and Metrology
Bjorn Hansson, Emil Espes, Julius Hallstedt, and Anasuya Adibhatla
Excillum AB, Jan Stenbecks Torg 17, SE-164 40, Kista, Sweden

035, Temperature Dependent Thermal Conductivity Measurements of Thin Oxide Films Via Steady State Thermoreflectance
John T. Gaskins, David H. Olson, Taylor M. Bates, and Patrick E. Hopkins
Laser Thermal Analysis, Inc., 937 2nd St. SE Charlottesville, VA

036, Non-Linear Optical Critical Dimension Metrology
David L. Adler1, Tim Wong1, Jianing Shi1, Michael Nielsen2, Aelan Mosden3, and Yun Han3
1Femtometrix Inc., 1604 Venice Blvd., Los Angeles, CA
2University of New South Wales, Sydney NSW 2052, Australia
3TEL Technology Center, America, NanoFab 300 South 255 Fuller Road, Suite 214, Albany, New York

037, EUV Imaging Reflectometer for Non-Destructive Compositional Mapping of Nanoelectronics
Yuka Esashi1, Michael Tanksalvala1, Nicholas W. Jenkins1, Christina L. Porter1, Galen P. Miley2, Bin Wang1, Naoto Horiguchi3, Matthew N. Jacobs1, Michael Gerrity1, Henry C. Kapteyn1,4, and Margaret M. Murnane1
1STROBE Science and Technology Center, JILA, University of Colorado Boulder, 440 UCB, Boulder, Colorado
2Department of Chemistry, Northwestern University, 2145 Sheridan Road, Evanston, IL
3Imec, Kapeldreef 75, 3001 Leuven, Belgium
4KMLabs, Inc., 4775 Walnut St., Suite 102, Boulder, Colorado

038, Half Wavelength Contact Acoustic Microscopy (HaWaCAM): a Novel Semiconductor Metrology Technique
P.L.M.J. van Neer1,2, B.A.J. Quesson1, M.S. Tamer3, K. Hatakeyama3, M.H. van Es3, M.C.J.M van Riel3, and D. Piras3
1Department of Acoustics and Sonar, TNO, the Netherlands
2Medical Imaging, ImPhys, Delft University of Technology, the Netherlands
3Department of Optomechatronics, TNO, the Netherlands

039, Accelerating Accuracy and Speed of Packaged-Device Nanoscale Characterization and FA Using a Novel LaserFIB Workflow
William Harris1, Cheryl Hartfield1, Vignesh Viswanathan2, and Longan Jiao2
1Carl Zeiss Microscopy LLC, White Plains, NY
2Research Microscopy Solutions, Carl Zeiss Pte Ltd, Singapore

040, Machine Learning-assisted Characterization of Hafnia-based Ferroelectric Thin Films
Amir Kordijazi1, Steven Consiglio2, Dina Triyoso2, Kandabara Tapily2, Asif Khan3, Gert Leusink2, and Alain Diebold1
1Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, New York, USA
2TEL Technology Center, America, LLC, Albany, New York, USA
3School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia, USA

041, Recommissioning the Length Scale Interferometer at the National Institute of Standards and Technology and Application to Length Traceability for Nanoelectronic Manufacturing
Ronald G. Dixson1, John A. Kramar1, Thomas W. LeBrun1, Olivier Marie-Rose2, and William B. Penzes1
1National Institute of Standards and Technology, Gaithersburg, Maryland
2Prometheus Computing, LLC., Sylva, North Carolina

042, Nanomagnetism Imaging NV Center in Diamond Using a Quantum Diamond Atomic Force Microscope
Steven M. Barnett1, Maosen Guo2, Guosheng Xue2, Pengfei Wang2, and Kebiao Xu3
1Barnett Technical Services, Elk Grove, CA
2Department of Physics, University of Science and Technology of China, Hefei, Anhui, China
3Chinainstru & Quantumtech (Hefei) Co.,Ltd. (CIQTEK), Hefei, Anhui, China

043, Cathodoluminescence Spectroscopy Probe of Semiconductor Defects and Carrier Dynamics
Steven M. Barnett1, and Samuel Sonderegger2
1Barnett Technical Services, Elk Grove, CA
2Attolight AG, EPFL Innovation Park, 1015 Lausanne, Switzerland

044, Ultra-wide Bandgap Semiconductor Materials Studied with Extreme Ultraviolet Atom Probe Tomography
Luis Miaja-Avila, Benjamin W. Caplins, Jacob M. Garcia, Ann N. Chiaramonti, and Norman A. Sanford
National Institute of Standards and Technology, Boulder, CO, USA


Created July 25, 2022, Updated April 30, 2024