Skip to main content
U.S. flag

An official website of the United States government

Dot gov

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Https

Secure .gov websites use HTTPS
A lock ( ) or https:// means you've safely connected to the .gov website. Share sensitive information only on official, secure websites.

Search Publications by Jason Campbell

Search Title, Abstract, Conference, Citation, Keyword or Author
Displaying 1 - 25 of 107

Switching variability factors in compliance-free metal oxide RRAM

Author(s)
Dmitry Veksler, Gennadi Bersuker, A W. Bushmaker, Pragya R. Shrestha, Kin P. Cheung, Jason P. Campbell
Switching variability in polycrystalline compliance-free HfO2-based 1R RRAM is evaluated employing ultra-fast low voltage pulse approach. Changes in filament

An Ultra-fast Multi-level MoTe2-based RRAM

Author(s)
Albert Davydov, Leonid A. Bendersky, Sergiy Krylyuk, Huairuo Zhang, Feng Zhang, Joerg Appenzeller, Pragya R. Shrestha, Kin P. Cheung, Jason P. Campbell
We report multi-level MoTe2-based resistive random-access memory (RRAM) devices with switching speeds of less than 5 ns due to an electric-field induced 2H to

Parasitic engineering for RRAM control

Author(s)
Pragya R. Shrestha, David M. Nminibapiel, Dmitry Veksler, Jason P. Campbell, Jason T. Ryan, helmut Baumgart, Kin P. Cheung
The inevitable current overshoot which follows forming or switching of filamentary resistive random access memory (RRAM) devices is often perceived as a source

Non-tunneling origin of the 1/f noise in SiC MOSFET

Author(s)
Kin P. Cheung, Jason P. Campbell
Abstract: It has long been established that MOSFET random telegraph noise and the cumulative 1/f noise is the result of inversion charge tunneling in and out of

Analysis and Control of RRAM Overshoot Current

Author(s)
Pragya R. Shrestha, David M. Nminibapiel, Jason P. Campbell, Jason T. Ryan, Dmitry Veksler, Helmut Baumgart, Kin P. Cheung
To combat the large variability problem in RRAM,current compliance elements are commonly used to limit the inrush current during the forming operation

Ferroelectricity in Polar Polymer-based FETs: A Hysteresis Analysis

Author(s)
Vasileia Georgiou, Dmitry Veksler, Jason P. Campbell, Jason T. Ryan, Pragya R. Shrestha, D. E. Ioannou, Kin P. Cheung
There is an increasing number of reports on polar polymer-based Ferroelectric Field Effect Transistors (FeFETs), where the hysteresis of the drain current –

Local field effect on charge-capture/emission dynamics

Author(s)
Kin P. Cheung, Dmitry Veksler, Jason P. Campbell
Charge-capture/emission is ubiquitous in solid state devices. Its dynamics often play critical roles in device operation and reliability. Treatment of this

Impact of RRAM Read Fluctuations on the Program-Verify Approach

Author(s)
David M. Nminibapiel, Dmitry Veksler, Pragya R. Shrestha, Jason P. Campbell, Jason T. Ryan, Helmut Baumgart, Kin P. Cheung
The stochastic nature of the conductive filaments in oxide-based resistive memory (RRAM) represents a sizeable impediment to commercialization. As such, program

Cryogenic pulsed I-V measurements on homo- and heterojunction III-V TFETs

Author(s)
Quentin Smets, Jihong Kim, Jason P. Campbell, David M. Nminibapiel, Dmitry Veksler, Pragya R. Shrestha, Rahul Pandey, Anne S. Verhulst, Eddy Simoens, David J. Gundlach, Curt A. Richter, Kin P. Cheung, Suman Suman, Anda Mocuta, Nadine Collaert, Aaron Thean, Marc Heyns
Most experimental reports of tunneling field-effect transistors show defect-related performance degradation. Charging of oxide traps causes Fermi level pinning

Characteristics of Resistive Memory Read Fluctuations in Endurance Cycling

Author(s)
David M. Nminibapiel, Dmitry Veksler, Pragya R. Shrestha, Jihong Kim, Jason P. Campbell, Jason T. Ryan, Helmut Baumgart, Kin P. Cheung
We report on new fluctuation dynamics of the high resistance state of Hafnia-based RRAM devices after RESET. We observe that large amplitude fluctuations occur

Compliance-Free Pulse Forming of Filamentary RRAM

Author(s)
Pragya R. Shrestha, David M. Nminibapiel, Jihong Kim, Helmut Baumgart, Kin P. Cheung, Jason P. Campbell
Despite the overwhelming effort to improve the efficacy of resistive random access memory (RRAM), the underlying physics governing RRAM operation have proven