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Publications

Search Publications by Jason Campbell

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Displaying 1 - 25 of 108

Scalable microresonators for room-temperature detection of electron spin resonance from dilute, sub-nanoliter volume solids

October 28, 2020
Author(s)

Nandita S. Abhyankar, Amit K. Agrawal, Pragya R. Shrestha, Russell A. Maier, Robert D. McMichael, Jason P. Campbell, Veronika A. Szalai

Microresonators used for spin detection in volume-limited samples suffer from poor quality factors, which adversely affect sensitivity and ease of coupling to the microwave source. Here we adapt a metamaterial design with toroidal moment to confine

Record Fast Polarization Switching Observed in Ferroelectric Hafnium Oxide Crossbar Arrays

July 2, 2020
Author(s)
Pragya R. Shrestha, xiao Lyu, Mengwei Si, Jason P. Campbell, Kin P. Cheung, Peide Ye
The polarization switching speed of ferroelectric (FE) hafnium zirconium oxide (HZO) is studied with the device size down to sub-μm in lateral dimension. Ultrafast measurement of transient switching current on metal-ferroelectric-metal (MFM) device with a

Memory update characteristics of carbon nanotube memristors (NRAM) under circuitry-relevant operation conditions

June 30, 2020
Author(s)
Dmitry Veksler, gennadi bersuker, A W. Bushmaker, Maribeth Mason, Pragya R. Shrestha, Kin P. Cheung, Jason P. Campbell, T Rueckes, L Clevlend, H Luan, D C. Gilmer
Carbon nanotubes (CNT) resistance-change memory devices were assessed for neuromorphic applications under high frequency use conditions by employing the ultra-short (100 ps -10 ns) voltage pulse technique. Under properly selected operation conditions, CNTs

Nanoscale MOSFET as a potential Room-Temperature Quantum Current Source

March 31, 2020
Author(s)
Kin P. Cheung, Jason P. Campbell
Nanoscale metal-oxide-semiconductor field-effect-transistors (MOSFETs) with only one defect at the interface can potentially become a single electron turnstile linking frequency and electronic charge to realize the elusive quantized current source. Charge

Nonresonant transmission line probe for sensitive interferometric electron spin resonance detection

August 5, 2019
Author(s)
Pragya R. Shrestha, Nandita S. Abhyankar, Mark A. Anders, Kin P. Cheung, Robert M. Gougelet, Jason T. Ryan, Veronika A. Szalai, Jason P. Campbell
Electron spin resonance (ESR) spectroscopy measures paramagnetic free radicals, or electron spins, in a variety of biological, chemical, and physical systems. Detection of diverse paramagnetic species is important in applications ranging from quantum

Switching variability factors in compliance-free metal oxide RRAM

March 31, 2019
Author(s)
Dmitry Veksler, Gennadi Bersuker, A W. Bushmaker, Pragya R. Shrestha, Kin P. Cheung, Jason P. Campbell
Switching variability in polycrystalline compliance-free HfO2-based 1R RRAM is evaluated employing ultra-fast low voltage pulse approach. Changes in filament conductivity are linked to the variations of energy released in a switching process. This study

An Ultra-fast Multi-level MoTe2-based RRAM

January 17, 2019
Author(s)
Albert Davydov, Leonid A. Bendersky, Sergiy Krylyuk, Huairuo Zhang, Feng Zhang, Joerg Appenzeller, Pragya R. Shrestha, Kin P. Cheung, Jason P. Campbell
We report multi-level MoTe2-based resistive random-access memory (RRAM) devices with switching speeds of less than 5 ns due to an electric-field induced 2H to 2Hd phase transition. Different from conventional RRAM devices based on ionic migration, the

Slow- and rapid-scan frequency-swept electrically detected magnetic resonance of MOSFETs with a non-resonant microwave probe within a semiconductor wafer-probing station

January 14, 2019
Author(s)
Duane J. McCrory, Mark A. Anders, Jason T. Ryan, Pragya R. Shrestha, Kin P. Cheung, Patrick M. Lenahan, Jason P. Campbell
We report on a novel electron paramagnetic resonance (EPR) technique that merges electrically detected magnetic resonance (EDMR) with a conventional semiconductor wafer probing station. This union, which we refer to as wafer-level EDMR (WL-EDMR), allows

Parasitic engineering for RRAM control

October 15, 2018
Author(s)
Pragya R. Shrestha, David M. Nminibapiel, Dmitry Veksler, Jason P. Campbell, Jason T. Ryan, helmut Baumgart, Kin P. Cheung
The inevitable current overshoot which follows forming or switching of filamentary resistive random access memory (RRAM) devices is often perceived as a source of variability that should be minimized. This sentiment has resulted in efforts to curtail the

Non-tunneling origin of the 1/f noise in SiC MOSFET

July 2, 2018
Author(s)
Kin P. Cheung, Jason P. Campbell
Abstract: It has long been established that MOSFET random telegraph noise and the cumulative 1/f noise is the result of inversion charge tunneling in and out of bulk traps in the gate oxide near the interface. The tunneling nature is a key concept upon

First Direct Experimental Studies of Hf0.5Zr0.5O2 Ferroelectric Polarization Switching Down to 100-picosecond in Sub-60mV/dec Germanium Ferroelectric Nanowire FETs

June 18, 2018
Author(s)
Wonil Chung, Mengwei Si, Pragya R. Shrestha, Jason P. Campbell, Kin P. Cheung, Peide Ye
In this work, ultrafast pulses with pulse widths ranging from 100 ps to seconds were applied on the gate of Ge ferroelectric (FE) nanowire (NW) pFETs with FE Hf0.5Zr0.5O2 (HZO) gate dielectric exhibiting steep subthreshold slope (SS) below 60 mV/dec bi

Glassy-Electret Random Access Memory – A naturally Nanoscale Memory Concept

April 20, 2018
Author(s)
Jason P. Campbell, Pragya R. Shrestha, Vasileia Georgiou, D. E. Ioannou, Kin P. Cheung
Self-heating is a serious issue in state-of-the-art MOSFET technology. Much efforts are currently being made to combat this problem to enable further scaling. In this work, self-heating in nanoscale MOSFET is leveraged and enhanced to enable a new memory

Wafer-Level Electrically Detected Magnetic Resonance:Magnetic Resonance in a Probing Station

March 20, 2018
Author(s)
Duane J. McCrory, Mark A. Anders, Jason T. Ryan, Pragya R. Shrestha, Kin P. Cheung, Patrick M. Lenahan, Jason P. Campbell
We report on a novel semiconductor reliability technique that incorporates an electrically detected magnetic resonance (EDMR) spectrometer within a conventional semiconductor wafer probing station. EDMR is an ultrasensitive electron paramagnetic resonance

Analysis and Control of RRAM Overshoot Current

January 15, 2018
Author(s)
Pragya R. Shrestha, David M. Nminibapiel, Jason P. Campbell, Jason T. Ryan, Dmitry Veksler, Helmut Baumgart, Kin P. Cheung
To combat the large variability problem in RRAM,current compliance elements are commonly used to limit the inrush current during the forming operation. Regardless of the compliance implementation (1R-1R or 1T-1R), some degree of current overshoot is

Ferroelectricity in Polar Polymer-based FETs: A Hysteresis Analysis

January 15, 2018
Author(s)
Vasileia Georgiou, Dmitry Veksler, Jason P. Campbell, Jason T. Ryan, Pragya R. Shrestha, D. E. Ioannou, Kin P. Cheung
There is an increasing number of reports on polar polymer-based Ferroelectric Field Effect Transistors (FeFETs), where the hysteresis of the drain current – gate voltage (Id-Vg) curve is investigated as the result of the ferroelectric polarization effect

Highly Efficient Rapid Annealing of Thin Polar Polymer Film Ferroelectric Devices at Sub-Glass Transition Temperature

December 18, 2017
Author(s)
Vasileia Georgiou, Dmitry Veksler, Jason T. Ryan, Jason P. Campbell, Pragya R. Shrestha, D. E. Ioannou, Kin P. Cheung
An unexpected rapid anneal of electrically active defects in an ultra-thin (15.5 nm) polar polyimide film at and below glass transition temperature (Tg) is reported. The polar polymer is the gate dielectric of a thin-film-transistor (TFT). Gate leakage

Towards reliable RRAM performance: macro- and microscopic analysis of operation processes

November 9, 2017
Author(s)
Gennadi Bersuker, Dmitry Veksler, David M. Nminibapiel, Pragya R. Shrestha, Jason P. Campbell, Jason T. Ryan, Helmut Baumgart, Maribeth Mason, Kin P. Cheung
Resistive RAM technology promises superior performance and scalability while employing well- developed fabrication processes. Conductance is strongly affected by structural changes in oxide insulators that make cell switching properties extremely sensitive

Local field effect on charge-capture/emission dynamics

October 30, 2017
Author(s)
Kin P. Cheung, Dmitry Veksler, Jason P. Campbell
Charge-capture/emission is ubiquitous in solid state devices. Its dynamics often play critical roles in device operation and reliability. Treatment of this basic process is found in many text books and is considered well understood. As in many solid state

Impact of RRAM Read Fluctuations on the Program-Verify Approach

May 22, 2017
Author(s)
David M. Nminibapiel, Dmitry Veksler, Pragya R. Shrestha, Jason P. Campbell, Jason T. Ryan, Helmut Baumgart, Kin P. Cheung
The stochastic nature of the conductive filaments in oxide-based resistive memory (RRAM) represents a sizeable impediment to commercialization. As such, program-verify methodologies are highly alluring. However, it was recently shown that program-verify

Cryogenic pulsed I-V measurements on homo- and heterojunction III-V TFETs

April 1, 2017
Author(s)
Quentin Smets, Jihong Kim, Jason P. Campbell, David M. Nminibapiel, Dmitry Veksler, Pragya R. Shrestha, Rahul Pandey, Anne S. Verhulst, Eddy Simoens, David J. Gundlach, Curt A. Richter, Kin P. Cheung, Suman Suman, Anda Mocuta, Nadine Collaert, Aaron Thean, Marc Heyns
Most experimental reports of tunneling field-effect transistors show defect-related performance degradation. Charging of oxide traps causes Fermi level pinning, and Shockley-Read-Hall (SRH)/trap-assisted tunneling (TAT) generation cause unwanted leakage

Characteristics of Resistive Memory Read Fluctuations in Endurance Cycling

January 23, 2017
Author(s)
David M. Nminibapiel, Dmitry Veksler, Pragya R. Shrestha, Jihong Kim, Jason P. Campbell, Jason T. Ryan, Helmut Baumgart, Kin P. Cheung
We report on new fluctuation dynamics of the high resistance state of Hafnia-based RRAM devices after RESET. We observe that large amplitude fluctuations occur more frequently immediately after programming and their frequency of occurrence decays in the