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First Direct Experimental Studies of Hf0.5Zr0.5O2 Ferroelectric Polarization Switching Down to 100-picosecond in Sub-60mV/dec Germanium Ferroelectric Nanowire FETs

Published

Author(s)

Wonil Chung, Mengwei Si, Pragya Shrestha, Jason Campbell, Kin P. Cheung, Peide Ye

Abstract

In this work, ultrafast pulses with pulse widths ranging from 100 ps to seconds were applied on the gate of Ge ferroelectric (FE) nanowire (NW) pFETs with FE Hf0.5Zr0.5O2 (HZO) gate dielectric exhibiting steep subthreshold slope (SS) below 60 mV/dec bi-directionally. With applied gate bias pulses (VG = -1 to -10 V), high-mobility Ge drain current was monitored as a test vehicle to capture the polarization switching of HZO. It was found that HZO could switch its polarization directly by a single pulse with the minimum pulse width of 3.6 ns. The polarization switching triggered by pulse train with pulse width as short as 100 ps was demonstrated for the first time.
Proceedings Title
2018 Symposium on VLSI Technology Digest of Technical Papers
Conference Dates
June 18-22, 2018
Conference Location
Honolulu, HI, US
Conference Title
2018 Symposia on VLSI Technology and Circuits

Keywords

ferroelectric, switching, picosecond, nanowire

Citation

Chung, W. , Si, M. , Shrestha, P. , Campbell, J. , Cheung, K. and Ye, P. (2018), First Direct Experimental Studies of Hf0.5Zr0.5O2 Ferroelectric Polarization Switching Down to 100-picosecond in Sub-60mV/dec Germanium Ferroelectric Nanowire FETs, 2018 Symposium on VLSI Technology Digest of Technical Papers, Honolulu, HI, US, [online], https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=926466 (Accessed May 28, 2024)

Issues

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Created June 17, 2018, Updated October 12, 2021