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PUBLICATIONS

Switching variability factors in compliance-free metal oxide RRAM

Published

Author(s)

Dmitry Veksler, Gennadi Bersuker, A W. Bushmaker, Pragya Shrestha, Kin P. Cheung, Jason Campbell

Abstract

Switching variability in polycrystalline compliance-free HfO2-based 1R RRAM is evaluated employing ultra-fast low voltage pulse approach. Changes in filament conductivity are linked to the variations of energy released in a switching process. This study indicates that initial state variability is reduced (suppressed) in more resistive filaments.
Proceedings Title
2019 International Reliability Physics Symposium
Conference Dates
March 31-April 4, 2019
Conference Location
Monterey, CA, US
Pub Type
Conferences

Download Paper

https://doi.org/10.1109/IRPS.2019.8720579
Local Download
Semiconductors

Citation

Veksler, D. , Bersuker, G. , Bushmaker, A. , Shrestha, P. , Cheung, K. and Campbell, J. (2019), Switching variability factors in compliance-free metal oxide RRAM, 2019 International Reliability Physics Symposium, Monterey, CA, US, [online], https://doi.org/10.1109/IRPS.2019.8720579, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=927459 (Accessed October 13, 2025)

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Created March 30, 2019, Updated October 12, 2021
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