Switching variability factors in compliance-free metal oxide RRAM
Dmitry Veksler, Gennadi Bersuker, A W. Bushmaker, Pragya R. Shrestha, Kin P. Cheung, Jason P. Campbell
Switching variability in polycrystalline compliance-free HfO2-based 1R RRAM is evaluated employing ultra-fast low voltage pulse approach. Changes in filament conductivity are linked to the variations of energy released in a switching process. This study indicates that initial state variability is reduced (suppressed) in more resistive filaments.