Skip to main content
U.S. flag

An official website of the United States government

Official websites use .gov
A .gov website belongs to an official government organization in the United States.

Secure .gov websites use HTTPS
A lock ( ) or https:// means you’ve safely connected to the .gov website. Share sensitive information only on official, secure websites.

Switching variability factors in compliance-free metal oxide RRAM



Dmitry Veksler, Gennadi Bersuker, A W. Bushmaker, Pragya Shrestha, Kin P. Cheung, Jason Campbell


Switching variability in polycrystalline compliance-free HfO2-based 1R RRAM is evaluated employing ultra-fast low voltage pulse approach. Changes in filament conductivity are linked to the variations of energy released in a switching process. This study indicates that initial state variability is reduced (suppressed) in more resistive filaments.
Proceedings Title
2019 International Reliability Physics Symposium
Conference Dates
March 31-April 4, 2019
Conference Location
Monterey, CA, US


Veksler, D. , Bersuker, G. , Bushmaker, A. , Shrestha, P. , Cheung, K. and Campbell, J. (2019), Switching variability factors in compliance-free metal oxide RRAM, 2019 International Reliability Physics Symposium, Monterey, CA, US, [online],, (Accessed June 22, 2024)


If you have any questions about this publication or are having problems accessing it, please contact

Created March 30, 2019, Updated October 12, 2021