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Switching variability factors in compliance-free metal oxide RRAM

Published

Author(s)

Dmitry Veksler, Gennadi Bersuker, A W. Bushmaker, Pragya R. Shrestha, Kin P. Cheung, Jason P. Campbell

Abstract

Switching variability in polycrystalline compliance-free HfO2-based 1R RRAM is evaluated employing ultra-fast low voltage pulse approach. Changes in filament conductivity are linked to the variations of energy released in a switching process. This study indicates that initial state variability is reduced (suppressed) in more resistive filaments.
Proceedings Title
2019 International Reliability Physics Symposium
Conference Dates
March 31-April 4, 2019
Conference Location
Monterey, CA
Created March 31, 2019, Updated January 27, 2020