Switching variability factors in compliance-free metal oxide RRAM
Dmitry Veksler, Gennadi Bersuker, A W. Bushmaker, Pragya Shrestha, Kin P. Cheung, Jason Campbell
Switching variability in polycrystalline compliance-free HfO2-based 1R RRAM is evaluated employing ultra-fast low voltage pulse approach. Changes in filament conductivity are linked to the variations of energy released in a switching process. This study indicates that initial state variability is reduced (suppressed) in more resistive filaments.
, Bersuker, G.
, Bushmaker, A.
, Shrestha, P.
, Cheung, K.
and Campbell, J.
Switching variability factors in compliance-free metal oxide RRAM, 2019 International Reliability Physics Symposium, Monterey, CA, US, [online], https://doi.org/10.1109/IRPS.2019.8720579, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=927459
(Accessed December 3, 2023)