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PUBLICATIONS

Memory update characteristics of carbon nanotube memristors (NRAM) under circuitry-relevant operation conditions

Published

Author(s)

Dmitry Veksler, gennadi bersuker, A W. Bushmaker, Maribeth Mason, Pragya Shrestha, Kin P. Cheung, Jason Campbell, T Rueckes, L Clevlend, H Luan, D C. Gilmer

Abstract

Carbon nanotubes (CNT) resistance-change memory devices were assessed for neuromorphic applications under high frequency use conditions by employing the ultra-short (100 ps -10 ns) voltage pulse technique. Under properly selected operation conditions, CNTs demonstrate switching characteristics promising for various NN implementations.
Conference Dates
April 28-May 30, 2020
Conference Location
Dallas, TX, US
Conference Title
2020 International Reliability Physics Symposium
Pub Type
Conferences

Download Paper

https://doi.org/10.1109/IRPS45951.2020.9128335
Local Download

Keywords

Neuromorphic computing, CNT, RRAM
Semiconductors and Nanomaterials

Citation

Veksler, D. , Bersuker, G. , Bushmaker, A. , Mason, M. , Shrestha, P. , Cheung, K. , Campbell, J. , Rueckes, T. , Clevlend, L. , Luan, H. and Gilmer, D. (2020), Memory update characteristics of carbon nanotube memristors (NRAM) under circuitry-relevant operation conditions, 2020 International Reliability Physics Symposium, Dallas, TX, US, [online], https://doi.org/10.1109/IRPS45951.2020.9128335, https://tsapps.nist.gov/publication/get_pdf.cfm?pub_id=929727 (Accessed December 15, 2024)

Issues

If you have any questions about this publication or are having problems accessing it, please contact reflib@nist.gov.

Created June 29, 2020, Updated October 12, 2021