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Memory update characteristics of carbon nanotube memristors (NRAM) under circuitry-relevant operation conditions



Dmitry Veksler, gennadi bersuker, A W. Bushmaker, Maribeth Mason, Pragya R. Shrestha, Kin P. Cheung, Jason P. Campbell, T Rueckes, L Clevlend, H Luan, D C. Gilmer


Carbon nanotubes (CNT) resistance-change memory devices were assessed for neuromorphic applications under high frequency use conditions by employing the ultra-short (100 ps -10 ns) voltage pulse technique. Under properly selected operation conditions, CNTs demonstrate switching characteristics promising for various NN implementations.
Conference Dates
April 28-May 30, 2020
Conference Location
Dallas, TX
Conference Title
2020 International Reliability Physics Symposium


Neuromorphic computing, CNT, RRAM
Created June 29, 2020, Updated September 9, 2020